Advances in 4H silicon carbide (4H-SiC) as a potential material for low-level ultraviolet (UV) radiation detection application at high-temperature, radiation hardened conditions are introduced. The latest progress in development of and the current state-of-art of different types of 4H-SiC-based UV photodetectors are reviewed. The approaches to improve the performances of the 4H-SiC-based photodetectors such as reducing the dark current and enhancing the photo responsivity are presented. The outlook for the development of 4H-SiC-based UV photodetectors are discussed.