Research on Energy Levels of Narrow Bandgap Semiconductor Material by Photoluminescence Spectra

Chen SHEN; Qian LI; Peng ZHOU; Hai-yan YANG

doi:10.3969/j.issn.1672-8785.2020.07.001

Journals >INFRARED >Volume 41 >Issue 7 >Page 1 > Article

INFRARED
Vol. 41, Issue 7, 1 (2020)

Research on Energy Levels of Narrow Bandgap Semiconductor Material by Photoluminescence Spectra

Chen SHEN^*, Qian LI, Peng ZHOU, and Hai-yan YANG

Author Affiliations

[in Chinese]

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DOI: 10.3969/j.issn.1672-8785.2020.07.001 Cite this Article

SHEN Chen, LI Qian, ZHOU Peng, YANG Hai-yan. Research on Energy Levels of Narrow Bandgap Semiconductor Material by Photoluminescence Spectra[J]. INFRARED, 2020, 41(7): 1 Copy Citation Text

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References

[5] Shao J, Lu W, Lv X, et al. Modulated Photoluminescence Spectroscopy with a Step-scan Fourier Transform Infrared Spectrometer [J]. Review of Scientific Instruments, 2006, 77(6): 063104.

[6] Zhang X H, Shao J, Chen L, et al. Infrared photoluminescence of arsenic-doped HgCdTe in a wide temperature range of up to 290 K [J]. Journal of Applied Physics, 2011, 110(4): 043503.

[7] Olego D J, Faurie J P, Raccah P M. Optical Investigation of Hole and Electron Subbands in HgTe-CdTe Superlattices [J]. Physical Review Letters, 1985, 55(3): 328-331.

[8] Shao J, Lv X, Guo S, et al. Impurity levels and Bandedge Electronic Structure in As-grown Arsenic-doped HgCdTe by Infrared Photoreflectance Spectroscopy [J]. Physical Review B, 2009, 80(15): 155125.

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SHEN Chen, LI Qian, ZHOU Peng, YANG Hai-yan. Research on Energy Levels of Narrow Bandgap Semiconductor Material by Photoluminescence Spectra[J]. INFRARED, 2020, 41(7): 1

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