• Vol. 41, Issue 7, 1 (2020)
Chen SHEN*, Qian LI, Peng ZHOU, and Hai-yan YANG
Author Affiliations
  • [in Chinese]
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    DOI: 10.3969/j.issn.1672-8785.2020.07.001 Cite this Article
    SHEN Chen, LI Qian, ZHOU Peng, YANG Hai-yan. Research on Energy Levels of Narrow Bandgap Semiconductor Material by Photoluminescence Spectra[J]. INFRARED, 2020, 41(7): 1 Copy Citation Text show less


    The energy band and defect energy level state are important parameters in the manufacturing process of narrow band gap semiconductor material chips. Infrared modulated photoluminescence(PL)spectrometer is a non-destructive and effective detection technology. This technology is used to detect different narrow band gap semiconductor materials. The spectral results are fitted with a line type to reveal the electronic transitions between different energy levels, and the results are analyzed. The results show that infrared modulated PL spectroscopy is an effective method for studying energy bands and defect energy levels of materials.