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Journals >Journal of Semiconductors >Volume 45 >Issue 9 >Page 092403 > Article

Journal of Semiconductors
Vol. 45, Issue 9, 092403 (2024)

High-performance GaSb planar PN junction detector

Yuanzhi Cui^1,2, Hongyue Hao^2,3,*, Shihao Zhang², Shuo Wang²..., Jing Zhang¹, Yifan Shan^2,3, Ruoyu Xie^2,3, Xiaoyu Wang¹, Chuang Wang¹, Mengchen Liu¹, Dongwei Jiang^2,3, Yingqiang Xu^2,3, Guowei Wang^2,3, Donghai Wu^2,3, Zhichuan Niu^2,3 and Derang Cao¹|Show fewer author(s)

Author Affiliations

¹College of Physics, National Demonstration Center for Experimental Applied Physics Education, Qingdao University, Qingdao 266071, China

²Key Laboratory of Optoelectronic Materials and Devices, Chinese Academy of Sciences, Beijing 100083, China

³College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing 100049, China

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DOI: 10.1088/1674-4926/24040024 Cite this Article

Yuanzhi Cui, Hongyue Hao, Shihao Zhang, Shuo Wang, Jing Zhang, Yifan Shan, Ruoyu Xie, Xiaoyu Wang, Chuang Wang, Mengchen Liu, Dongwei Jiang, Yingqiang Xu, Guowei Wang, Donghai Wu, Zhichuan Niu, Derang Cao. High-performance GaSb planar PN junction detector[J]. Journal of Semiconductors, 2024, 45(9): 092403 Copy Citation Text

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References

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[7] M H Dolas, O Atesal, M D Caliskan et al. Low dark current diffusion limited planar type InGaAs photodetectors. Infrared Sensors, Devices, and Applications IX, 11129, 91(2019).

[8] A Hoang, G Chen, A Haddadi et al. Demonstration of shortwavelength infrared photodiodes based on type-II InAs/GaSb/AlSb superlattices. Appl Phys Lett, 100, 211101(2012).

[9] B Yan, W Liu, Z Yu et al. Temperature dynamic compensation vertical bridgman method growth of high-quality GaSb single crystals. J Cryst Growth, 602, 126988(2023).

[10] K C Nunna, S L Tan, C J Reyner et al. Short-wave infrared GaInAsSb photodiodes grown on GaAs substrate by interfacial misfit array technique. IEEE Photonics Technol Lett, 24, 218(2011).

[11] J Li, R Saroj, S Slivken et al. High performance planar antimony-based superlattice photodetectors using zinc diffusion grown by MBE. Photonics, 9, 664(2022).

[12] N W Gray, A Prax, D Johnson et al. Rapid development of high-volume manufacturing methods for epi-ready GaSb wafers up to 6” diameter for IR imaging applications. Infrared Technology and Applications XLII, 9819, 274(2016).

[13] Z H Li, H Y Li, H Y Du et al. Study of InSb IRFPA with planar PN junctions. Laser Infrared, 45, 814(2015).

[14] K Lim, H Pham, S Yoon et al. InSb1-xNx/InSb/GaAs alloys by thermal annealing for midinfrared photodetection. Appl Phys Lett, 97, 221112(2010).

[15] Z Kang, G C Qiu. InSb IRFPA detector chip with planar PN junction based on thermal diffusion method. Laser Infrared, 44, 757(2014).

[16] M N Simcock, J L Santailler, P Dusserre et al. Zinc diffusion in GaSb for thermophotovoltaic cell applications. AIP Conf Proc, 738, 303(2004).

[17] A Newell, J Logan, R Carrasco et al. Effects of doping and minority carrier lifetime on mid-wave infrared InGaAs/InAsSb superlattice nBn detector performance. Appl Phys Lett, 122, 171102(2023).

[18] H Hao, G Wang, W Xiang et al. Fabrication of type-II InAs/GaSb superlattice long-wavelength infrared focal plane arrays. Infrared Phys Technol, 72, 276(2015).

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Yuanzhi Cui, Hongyue Hao, Shihao Zhang, Shuo Wang, Jing Zhang, Yifan Shan, Ruoyu Xie, Xiaoyu Wang, Chuang Wang, Mengchen Liu, Dongwei Jiang, Yingqiang Xu, Guowei Wang, Donghai Wu, Zhichuan Niu, Derang Cao. High-performance GaSb planar PN junction detector[J]. Journal of Semiconductors, 2024, 45(9): 092403

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