Low-power, flexible, and integrated photodetectors have attracted increasing attention due to their potential applications of photosensing, astronomy, communications, wearable electronics, etc. Herein, the samples of ZnO microwires having p-type (Sb-doped ZnO, ZnO:Sb) and n-type (Ga-doped ZnO, ZnO:Ga) conduction properties were synthesized individually. Sequentially, a p-n homojunction vertical structure photodiode involving a single ZnO:Sb microwire crossed with a ZnO:Ga microwire, which can detect ultraviolet light signals, was constructed. When exposed under 360 nm light illumination at -0.1V, the proposed photodiode reveals pronounced photodetection features, including a largest on/off ratio of 105, responsivity of 2.3 A/W, specific detectivity of ∼6.5×1013 Jones, noise equivalent power of 4.8×10-15WHz-1/2, and superior photoelectron conversion efficiency of ∼7.8%. The photodiode also exhibits a fast response/recovery time of 0.48 ms/9.41 ms. Further, we propose a facile and scalable construction scheme to integrate a p-ZnO:Sb⊗n-ZnO:Ga microwires homojunction component into a flexible, array-type detector, which manifests significant flexibility and electrical stability with insignificant degradation. Moreover, the as-constructed array unit can be integrated into a practical photoimaging system, which demonstrates remarkable high-resolution single-pixel imaging capability. The results represented in this work may supply a workable approach for developing low-dimensional ZnO-based homojunction optoelectronic devices with low-consumption, flexible, and integrated characteristics.