• Acta Optica Sinica
  • Vol. 38, Issue 10, 1014001 (2018)
Jida Hou1、2、*, Cong Xiong2、*, Qiong Qi2, Suping Liu2, and Xiaoyu Ma2
Author Affiliations
  • 1 University of Chinese Academy of Sciences, Beijing 100049, China
  • 2 National Engineering Research Center for Optoelectronic Devices, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
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    DOI: 10.3788/AOS201838.1014001 Cite this Article Set citation alerts
    Jida Hou, Cong Xiong, Qiong Qi, Suping Liu, Xiaoyu Ma. Optimization Design of Epitaxially-Stacked Multiple-Active-Region Lasers[J]. Acta Optica Sinica, 2018, 38(10): 1014001 Copy Citation Text show less
    Schematic of three-active-region lasers based on epitaxially-stacked structure
    Fig. 1. Schematic of three-active-region lasers based on epitaxially-stacked structure
    Refractive index, fundamental mode and the first mode distribution of double-active-region lasers
    Fig. 2. Refractive index, fundamental mode and the first mode distribution of double-active-region lasers
    Refractive index profile, near-field optical intensity of fundamental mode, doping concentration and free carrier absorption loss distribution in each region of three-active-region lasers
    Fig. 3. Refractive index profile, near-field optical intensity of fundamental mode, doping concentration and free carrier absorption loss distribution in each region of three-active-region lasers
    Diagram of the far-field divergence patterns of calculated and measured three-active-region lasers
    Fig. 4. Diagram of the far-field divergence patterns of calculated and measured three-active-region lasers
    Typical P-I characteristics of laser diodes adopting epitaxially-stacked structure with 3 emitters and traditional structure with a single emitter in a pulsed mode (150 ns, 6.67 kHz), embedded diagram of the upper left corner shows the detected pulsed laser optical power signal
    Fig. 5. Typical P-I characteristics of laser diodes adopting epitaxially-stacked structure with 3 emitters and traditional structure with a single emitter in a pulsed mode (150 ns, 6.67 kHz), embedded diagram of the upper left corner shows the detected pulsed laser optical power signal
    Jida Hou, Cong Xiong, Qiong Qi, Suping Liu, Xiaoyu Ma. Optimization Design of Epitaxially-Stacked Multiple-Active-Region Lasers[J]. Acta Optica Sinica, 2018, 38(10): 1014001
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