[1] N B MIN. The Physical Basis of Crystal Growth, 11(2019).

[2] L YANG, R ZUO, W J SU et al. Study on numerical simulation of thermal stress at different stages in Kyropoulos sapphire crystal growth. Materials Reports, 134(2012).

[3] G MÜLLER. Experimental analysis and modeling of melt growth processes. Journal of Crystal Growth, 1628(2002).

[4] H ZHANG, T Y JIANG, X J CHEN. Blossom of boule shoulder in growing Nd:YAG crystals. Journal of Synthetic Crystals, 265(1991).

[5] Y D ZHOU, J C ZANG, G Q LIU. Growth technique of Pb₂MoO₅ single crystal and analysing the causes of crystal cracks. Journal of Beijing University of Technology, 35(1983).

[6] J R JIN, R Y XU, Q B ZHU et al. Growth of high quality lithium niobate crystal. Journal of Synthetic Crystals, 11(1981).

[7] T YAN. Growth, Structure and Properties of High Quality LiNbO3 and LiTaO3 Crystals(2008).

[8] C STELIAN, G SEN, T DUFFAR. Comparison of thermal stress computations in Czochralski and Kyropoulos growth of sapphire crystals. Journal of Crystal Growth, 77(2018).

[9] C H CHEN, J C CHEN, Y S CHIUE et al. Thermal and stress distributions in larger sapphire crystals during the cooling process in a Kyropoulos furnace. Journal of Crystal Growth, 55(2014).

[10] T YAO, H B ZUO, J C HAN et al. The simulation of the stress distribution in sapphire crystal growth progress. Journal Harbin University Science & Technology, 100(2006).

[11] J H LIU, M Y QIAO. Theoretical analysis of the cracking of crystal grown by Czochralski method. Journal of Crystal Growth, 281(1984).

[12] Y CHEN. Application of flat crystal formation in Germanium mono-crystal growing. Yunnan Metallurgy, 36(2002).

[13] O BUDENKOVA, M VASILIEV, V YUFEREV et al. Effect of internal radiation on the solid-liquid interface shape in low and high thermal gradient Czochralski oxide growth. Journal of Crystal Growth, 156(2007).

[14] V BERMÚDEZ, O N BUDENKOVA, V S YUFEREV et al. Effect of the shouldering angle on the shape of the solid-liquid interface and temperature fields in sillenite-type crystals growth. Journal of Crystal Growth, 82(2005).

[15] GROUP of. Growth of <104> orientated lithium niobate crystals. Journal of Inorganic Materials, 9(1977).

[16] Z GALAZKA. Radial temperature distribution in LiNbO₃ crystals pulled by the Czochralski technique. Journal of Crystal Growth, 345(1997).

[17] Y Q XU, X C LI, N F SUN et al. The study of ϕ100 mm sulfur doped InP single crystal growth. Semiconductor Technology, 29, 31(2004).

[18] Y R LI, Q F HUANG, X L LI et al. Study on the progress of seeding and shoulder controlling on HP-LEC InP single crystal growth. Semiconductor Technology, 840(2013).

[19] J C ROJO, E DIÉGUEZ, J J DERBY. A heat shield to control thermal gradients, melt convection, and interface shape during shouldering in Czochralski oxide growth. Journal of Crystal Growth, 329(1999).

[20] W SONG. Numerical Simulation Analysis of Czochralski Growth Processes for Langasite Crystal(2009).

[21] Z J ZHANG. Growth of flat shoulder germanium single crystal using large size ratio of crystal to crucible. Journal of Yunnan University, 78(2002).

[22] J QIN, J SUN, Y X HAO et al. Effect of exposed crucible wall on the Czochralski growth of an LN crystal. CrystEngComm, 450(2023).

[23] J F SHANG, J SUN, Y J ZHANG et al. A method to measure electro-optic coefficients of crystals by combining conoscopic interference and near optical axis electro-optic modulation. Journal of Synthetic Crystals, 2925(2015).

[24] B C WU. Improvement of optical homogeneity of LN crystal by heat treating. Chinese Journal of Lasers, 40(1978).

[25] K TAKAGI, T FUKAZAWA, M ISHII. Inversion of the direction of the solid-liquid interface on the Czochralski growth of GGG crystals. Journal of Crystal Growth, 89(1976).

[26] S WANG. Hot Zone Design and Thermal Stress Analysis during Growth of Bulk Crystals(2016).

[27] L STOCKMEIER, L LEHMANN, A MILLER et al. Dislocation formation in heavily as-doped Czochralski grown silicon. Crystal Research & Technology(2017).

[28] J C BRICE. The cracking of Czochralski-grown crystals. Journal of Crystal Growth, 427(1977).

[29] J H LIU, M Y QIAO, J L LI. Growth of LN crystal. Journal of Changchun University of Science and Technology, 73(1987).

[30] S WANG, H FANG. Dependence of thermal stress evolution on power allocation during Kyropoulos sapphire cooling process. Applied T1ermal Engineering, 150(2016).

[31] M G MIL'VIDSKII, E P BOCHKAREV. Creation of defects during the growth of semiconductor single crystals and films. Journal of Crystal Growth, 61(1978).

[32] T TSUKADA, K KAKINOKI, M HOZAWA et al. Numerical and experimental studies on crack formation in LiNbO₃ single crystal. Journal of Crystal Growth, 543(1997).

[33] X Y ZHANG, X J GUAN, Z B PAN et al. Simulation on effect of heat shield position on the V/G and point defect and thermal stress of Czochralski silicon. Journal of Synthetic Crystals, 771(2014).

[34] X J GUAN, X Y ZHANG, Z B PAN et al. Simulation on effect of heat shield position on the melt and solid liquid interface Cz silicon. Journal of Synthetic Crystals, 329(2015).

[35] Q H CHEN. On the crystal diameter change during the shouldering process in the Czochralski. Journal of Synthetic Crystals, 345(1984).

[36] D D LIANG. Study on the Flat Shoulder Growth of Lithium Niobate Crystal(2017).

[37] G J YU, Y M ZONG, Z H ZHANG et al. Bubbles distribution in sapphire crystal grown by Kyropoulos method. Journal of Synthetic Crystals, 1332(2014).

[38] S H LI, X H PAN, Y LIU et al. Interactions between bubble and interface during KTa_1-xNb_xO₃ crystal growth. Journal of Inorganic Materials, 1223(2017).

[39] Y MUKAIYAMA, K SUEOKA, S MAEDA et al. Numerical analysis of effect of thermal stress depending on pulling rate on behavior of intrinsic point defects in large-diameter Si crystal grown by Czochralski method. Journal of Crystal Growth(2020).