Jinlei LI, Jingnan LIU, Jingwen ZHANG, Xin LIU, Shuochen MA, Xun HOU. Structural Design and Pulse Circuit Optimization of High Voltage SiC-based DSRD Devices[J]. Acta Photonica Sinica, 2022, 51(10): 1025001
- Acta Photonica Sinica
- Vol. 51, Issue 10, 1025001 (2022)
Fig. 1. Influence of base region on breakdown characteristics of high voltage SiC DSRD devices
Fig. 2. Influence of base region on dynamic characteristics of high voltage SiC DSRD Devices
Fig. 3. Schematic of the structure of a high-voltage SiC DSRD device
Fig. 4. Simulation of breakdown characteristics of high-voltage SiC DSRD devices
Fig. 5. High voltage SiC DSRD equivalent model
Fig. 6. High voltage DSRD pulse source simulation circuit
Fig. 7. The influence of different MOS transistor driving time on the load output pulse
Fig. 8. The effect of the capacitance value of capacitor C1 on the circuit
Fig. 9. Influence of DC voltage source V1 on output pulse（V2=60 V）
Fig. 10. Output characteristics of pulse source circuit based on high voltage SiC DSRD model
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