• Chinese Journal of Quantum Electronics
  • Vol. 19, Issue 1, 25 (2002)
[in Chinese]1, [in Chinese]1、2, and [in Chinese]1、2
Author Affiliations
  • 1[in Chinese]
  • 2[in Chinese]
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    DOI: Cite this Article
    [in Chinese], [in Chinese], [in Chinese]. The Relation between Infrared Residual Absorption and Point Defects in Ti3+: α-Al2O3 Single Crystal[J]. Chinese Journal of Quantum Electronics, 2002, 19(1): 25 Copy Citation Text show less

    Abstract

    The absorption spectra in a range of VIS to NIR and the stretching infrared spectra of OH-radical in Ti-doped a-Al2O3 crystal are measured in a number of samples. The obtained experimental data support that the residual infrared absorption is really due to Ti3+-Ti4+ pairs rather than structure defects with adjacent Ti4+ ions in the crystal. We conclude that Ti3+-Ti4+ pairs probably locate at phase boundary between matrix and heterogeneous phase (TiO2) or in body of heterogeneous phase, i.e., the residual infrared absorption is absorption of the Ti3+ ions located at the phase boundary or in body of heterogeneous phase.
    [in Chinese], [in Chinese], [in Chinese]. The Relation between Infrared Residual Absorption and Point Defects in Ti3+: α-Al2O3 Single Crystal[J]. Chinese Journal of Quantum Electronics, 2002, 19(1): 25
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