• Chinese Optics Letters
  • Vol. 19, Issue 8, 082503 (2021)
Huabin Yu1, Zhongjie Ren2, Muhammad Hunain Memon1, Shi Fang1..., Danhao Wang1, Zhongling Liu1, Haochen Zhang1, Feng Wu3, Jiangnan Dai3, Changqing Chen3 and Haiding Sun1,*|Show fewer author(s)
Author Affiliations
  • 1School of Microelectronics, University of Science and Technology of China, Hefei 230026, China
  • 2Department of Electrical and Computer Engineering, University of California San Diego, La Jolla, CA 92037, USA
  • 3Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan 430074, China
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    DOI: 10.3788/COL202119.082503 Cite this Article Set citation alerts
    Huabin Yu, Zhongjie Ren, Muhammad Hunain Memon, Shi Fang, Danhao Wang, Zhongling Liu, Haochen Zhang, Feng Wu, Jiangnan Dai, Changqing Chen, Haiding Sun, "Cascaded deep ultraviolet light-emitting diode via tunnel junction," Chin. Opt. Lett. 19, 082503 (2021) Copy Citation Text show less
    (a) Schematics of the C-DUV LED and (b) the TJC-DUV LED.
    Fig. 1. (a) Schematics of the C-DUV LED and (b) the TJC-DUV LED.
    (a) LOPs as functions of the injection currents for the C-DUV LEDs with five QWs, 10 QWs, and the TJC-DUV LED, respectively. (b) The EL spectra of the three DUV LEDs. (c) The LOPs and IQEs as functions of the number of the QWs in the C-DUV LED at 60 mA. (d) The current-voltage characteristics of the three investigated samples.
    Fig. 2. (a) LOPs as functions of the injection currents for the C-DUV LEDs with five QWs, 10 QWs, and the TJC-DUV LED, respectively. (b) The EL spectra of the three DUV LEDs. (c) The LOPs and IQEs as functions of the number of the QWs in the C-DUV LED at 60 mA. (d) The current-voltage characteristics of the three investigated samples.
    (a) Required input power of the C-DUV LEDs with five QWs, 10 QWs, and TJC-DUV LED, respectively, as a function of output power. (b) The corresponding WPE values of the three devices as functions of current.
    Fig. 3. (a) Required input power of the C-DUV LEDs with five QWs, 10 QWs, and TJC-DUV LED, respectively, as a function of output power. (b) The corresponding WPE values of the three devices as functions of current.
    Energy band diagram for the TJC-DUV LED at 60 mA.
    Fig. 4. Energy band diagram for the TJC-DUV LED at 60 mA.
    e–h concentrations within active regions for (a1) the C-DUV LED with five QWs, (b1) the C-DUV LED with 10 QWs, and (c1) the TJC-DUV LED, respectively. The radiative recombination rates within the active regions for (a2) the C-DUV LED with five QWs, (b2) the C-DUV LED with 10 QWs, and (c2) the TJC-DUV LED. The non-radiative recombination rates within the active regions at 60 mA for (d) the C-DUV LED and (e) the TJC-DUV LED. (f) The IQE values of the two devices as functions of current.
    Fig. 5. e–h concentrations within active regions for (a1) the C-DUV LED with five QWs, (b1) the C-DUV LED with 10 QWs, and (c1) the TJC-DUV LED, respectively. The radiative recombination rates within the active regions for (a2) the C-DUV LED with five QWs, (b2) the C-DUV LED with 10 QWs, and (c2) the TJC-DUV LED. The non-radiative recombination rates within the active regions at 60 mA for (d) the C-DUV LED and (e) the TJC-DUV LED. (f) The IQE values of the two devices as functions of current.
    Huabin Yu, Zhongjie Ren, Muhammad Hunain Memon, Shi Fang, Danhao Wang, Zhongling Liu, Haochen Zhang, Feng Wu, Jiangnan Dai, Changqing Chen, Haiding Sun, "Cascaded deep ultraviolet light-emitting diode via tunnel junction," Chin. Opt. Lett. 19, 082503 (2021)
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