• Chinese Optics Letters
  • Vol. 19, Issue 8, 082503 (2021)
Huabin Yu1, Zhongjie Ren2, Muhammad Hunain Memon1, Shi Fang1, Danhao Wang1, Zhongling Liu1, Haochen Zhang1, Feng Wu3, Jiangnan Dai3, Changqing Chen3, and Haiding Sun1、*
Author Affiliations
  • 1School of Microelectronics, University of Science and Technology of China, Hefei 230026, China
  • 2Department of Electrical and Computer Engineering, University of California San Diego, La Jolla, CA 92037, USA
  • 3Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan 430074, China
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    DOI: 10.3788/COL202119.082503 Cite this Article Set citation alerts
    Huabin Yu, Zhongjie Ren, Muhammad Hunain Memon, Shi Fang, Danhao Wang, Zhongling Liu, Haochen Zhang, Feng Wu, Jiangnan Dai, Changqing Chen, Haiding Sun. Cascaded deep ultraviolet light-emitting diode via tunnel junction[J]. Chinese Optics Letters, 2021, 19(8): 082503 Copy Citation Text show less

    Abstract

    The AlGaN-based deep ultraviolet (DUV) light-emitting diode (LED) is an alternative DUV light source to replace traditional mercury-based lamps. However, the state-of-the-art DUV LEDs currently exhibit poor wall-plug efficiency and low light output power, which seriously hinder their commercialization. In this work, we design and report a tunnel-junction-cascaded (TJC) DUV LED, which enables multiple radiative recombinations within the active regions. Therefore, the light output power of the TJC-DUV LEDs is more than doubled compared to the conventional DUV LED. Correspondingly, the wall-plug efficiency of the TJC-DUV LED is also significantly boosted by 25% at 60 mA.
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    Huabin Yu, Zhongjie Ren, Muhammad Hunain Memon, Shi Fang, Danhao Wang, Zhongling Liu, Haochen Zhang, Feng Wu, Jiangnan Dai, Changqing Chen, Haiding Sun. Cascaded deep ultraviolet light-emitting diode via tunnel junction[J]. Chinese Optics Letters, 2021, 19(8): 082503
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