• Chinese Optics Letters
  • Vol. 19, Issue 8, 082503 (2021)
Huabin Yu1, Zhongjie Ren2, Muhammad Hunain Memon1, Shi Fang1, Danhao Wang1, Zhongling Liu1, Haochen Zhang1, Feng Wu3, Jiangnan Dai3, Changqing Chen3, and Haiding Sun1、*
Author Affiliations
  • 1School of Microelectronics, University of Science and Technology of China, Hefei 230026, China
  • 2Department of Electrical and Computer Engineering, University of California San Diego, La Jolla, CA 92037, USA
  • 3Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan 430074, China
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    The AlGaN-based deep ultraviolet (DUV) light-emitting diode (LED) is an alternative DUV light source to replace traditional mercury-based lamps. However, the state-of-the-art DUV LEDs currently exhibit poor wall-plug efficiency and low light output power, which seriously hinder their commercialization. In this work, we design and report a tunnel-junction-cascaded (TJC) DUV LED, which enables multiple radiative recombinations within the active regions. Therefore, the light output power of the TJC-DUV LEDs is more than doubled compared to the conventional DUV LED. Correspondingly, the wall-plug efficiency of the TJC-DUV LED is also significantly boosted by 25% at 60 mA.
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    Huabin Yu, Zhongjie Ren, Muhammad Hunain Memon, Shi Fang, Danhao Wang, Zhongling Liu, Haochen Zhang, Feng Wu, Jiangnan Dai, Changqing Chen, Haiding Sun. Cascaded deep ultraviolet light-emitting diode via tunnel junction[J]. Chinese Optics Letters, 2021, 19(8): 082503
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    Category: Optoelectronics
    Received: Dec. 17, 2020
    Accepted: Feb. 2, 2021
    Posted: Apr. 22, 2021
    Published Online: Apr. 27, 2021
    The Author Email: Haiding Sun (haiding@ustc.edu.cn)