• Acta Optica Sinica
  • Vol. 40, Issue 8, 0814001 (2020)
Yingying Yan1、2, Zhiwen Chen1、2, Jian Qiu1、2、*, Kefu Liu1、2, and Jianwei Zhang3
Author Affiliations
  • 1Engineering Research Center of Advanced Lighting Technology, Ministry of Education, Fudan University, Shanghai 200433, China
  • 2Department of Light Sources and Illuminating Engineering, School of Information Science and Technology, Fudan University, Shanghai 200433, China
  • 3State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun, Jilin 130033, China
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    DOI: 10.3788/AOS202040.0814001 Cite this Article Set citation alerts
    Yingying Yan, Zhiwen Chen, Jian Qiu, Kefu Liu, Jianwei Zhang. Effect of Package on Luminescence Characteristics of High-Power VCSEL with Narrow Pulse[J]. Acta Optica Sinica, 2020, 40(8): 0814001 Copy Citation Text show less
    References

    [1] Zhou D L, Seurin J F, Xu G Y et al. Progress on high-power high-brightness VCSELs and applications[J]. Proceedings of SPIE, 9381, 93810B(2015).

    [2] Carson R F, Warren M E, Dacha P et al. Progress in high-power high-speed VCSEL arrays[J]. Proceedings of SPIE, 9766, 97660B(2016).

    [3] Liang X M, Zhang X, Zhang J W et al. 910 nm high peak power vertical-cavity surface-emitting laser source[J]. Journal of Infrared and Millimeter Waves, 38, 668-673(2019).

    [4] Gao S J, Zhang X, Zhang J W et al. Miniaturized VCSEL pulsed laser source with high peak power at 980 nm[J]. Journal of Infrared and Millimeter Waves, 35, 578-583(2016).

    [5] Luo J W, Liu K, Wei Q et al. Integrated chip for simultaneous transmission and reception in optical communication links[J]. Acta Optica Sinica, 39, 0806003(2019).

    [6] Li Z F, Wang H J, Wang W R et al. Upconversion by vertical cavity surface emitting laser injection locking[J]. Acta Optica Sinica, 34, 0206001(2014).

    [7] Seurin J F, Zhou D L, Xu G Y et al. High-efficiency VCSEL arrays for illumination and sensing in consumer applications[J]. Proceedings of SPIE, 9766, 97660D(2016).

    [8] Warren M E, Carson R F, Joseph J R et al. High-speed and scalable high-power VCSEL arrays and their applications[J]. Proceedings of SPIE, 9381, 93810C(2015).

    [9] Zhang J W, Ning Y Q, Zhang X et al. 910 nm vertical-cavity surface-emitting laser arrays with 100 W output power level and low driving current[J]. Japanese Journal of Applied Physics, 57, 100302(2018).

    [10] Kostamovaara J, Huikari J, Hallman L et al. On laser ranging based on high-speed/energy laser diode pulses and single-photon detection techniques[J]. IEEE Photonics Journal, 7, 1-15(2015).

    [13] Reusch D, Strydom J. Understanding the effect of PCB layout on circuit performance in a high-frequency gallium-nitride-based point of load converter[J]. IEEE Transactions on Power Electronics, 29, 2008-2015(2014).

    [14] Wens M, Redoute J M, Blanchaert T et al. An integrated 10 A, 2.2 ns rise-time laser-diode driver for LIDAR applications. [C]∥2009 Proceedings of ESSCIRC, September 14-18, 2009, Athens, Greece. New York: IEEE, 145-148(2009).

    [15] Directed Energy[2019-11-11]. Inc. PCO-7110 laser diode driver module[2019-11-11]. https:∥directedenergy.com/wp-content/uploads/2017/09/PCO-7110_Manual_RevA.pdf..

    [16] Seurin J F, Ghosh C L, Khalfin V et al. High-power high-efficiency 2D VCSEL arrays[J]. Proceedings of SPIE, 6908, 690808(2008).

    [17] Hallman L, Huikari J, Kostamovaara J. A high-speed/power laser transmitter for single photon imaging applications. [C]∥SENSORS, 2014 IEEE, November 2-5, 2014, Valencia, Spain. New York: IEEE, 1157-1160(2014).

    [18] Wen S C, Wang M, Xie J et al. Large current nanosecond pulse generating circuit for driving semiconductor laser diode[J]. Microwave and Optical Technology Letters, 61, 867-872(2019).

    [19] Ou Y, Gustavsson J S, Westbergh P et al. Impedance characteristics and parasitic speed limitations of high-speed 850-nm VCSELs[J]. IEEE Photonics Technology Letters, 21, 1840-1842(2009).

    [20] Ouyang L. Equivalent circuit model of vertical cavity surface emitting lasers[D]. Shanghai: East China Normal University(2011).

    [21] Bour D P, Rosen A. Optimum cavity length for high conversion efficiency quantum well diode lasers[J]. Journal of Applied Physics, 66, 2813-2818(1989).

    Yingying Yan, Zhiwen Chen, Jian Qiu, Kefu Liu, Jianwei Zhang. Effect of Package on Luminescence Characteristics of High-Power VCSEL with Narrow Pulse[J]. Acta Optica Sinica, 2020, 40(8): 0814001
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