Author Affiliations
1Engineering Research Center of Advanced Lighting Technology, Ministry of Education, Fudan University, Shanghai 200433, China2Department of Light Sources and Illuminating Engineering, School of Information Science and Technology, Fudan University, Shanghai 200433, China3State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun, Jilin 130033, Chinashow less
Fig. 1. Cross-sectional diagram of VCSEL array
Fig. 2. Photograph of VCSEL with bare chip
Fig. 3. Photograph of VCSEL with TO package. (a) Side view; (b) top view
Fig. 4. VCSEL with TO package. (a) Diagram of configuration; (b) equivalent circuit
Fig. 5. Simplified diagram of drive circuit
Fig. 6. Simplified diagram of PCB. (a) Top view; (b) bottom view; (c) side view
Fig. 7. Voltage and current simulation waveforms at both ends of VCSEL with different Ls (C=10 nF, V=90 V)
Fig. 8. Voltage and current simulation waveforms at both ends of VCSEL with different Rs (C=10 nF, V=90 V)
Fig. 9. Pulse waveforms of voltage and current at both ends of VCSEL (C=10 nF, V=90 V). (a) VCSEL with TO package; (b) VCSEL with bare chip
Fig. 10. Optical pulse waveforms of VCSEL with TO package and VCSEL with bare chip (C=10 nF, V=90 V)
Fig. 11. Relationship between peak current and peak voltage for VCSEL with TO package and VCSEL with bare chip
Fig. 12. Comparison of simulated and experimental waveform. (a) VCSEL with TO package; (b) VCSEL with bare chip
Fig. 13. Relationship between peak power of optical pulse and peak current of VCSEL with TO package and VCSEL with bare chip (C=10 nF, V=30--90 V)
Fig. 14. Relationship between power conversion efficiency and peak current of VCSEL with TO package and VCSEL with bare chip (C=10 nF, V=30--90 V)