Researching | Analysis of Saturation Characteristics of Silicon-Based Photodiodes Irradiated by Picosecond Laser

Journals >Laser & Optoelectronics Progress >Volume 59 >Issue 13 >Page 1304003 > Article

Laser & Optoelectronics Progress
Vol. 59, Issue 13, 1304003 (2022)

Analysis of Saturation Characteristics of Silicon-Based Photodiodes Irradiated by Picosecond Laser

Meng Yao, Jifei Ye^*, Lan Li, and Heyan Gao

Author Affiliations

State Key Laboratory of Laser Propulsion & Application, Department of Aerospace Science and Technology, Aerospace Engineering University, Beijing 101416, China

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DOI: 10.3788/LOP202259.1304003 Cite this Article Set citation alerts

Meng Yao, Jifei Ye, Lan Li, Heyan Gao. Analysis of Saturation Characteristics of Silicon-Based Photodiodes Irradiated by Picosecond Laser[J]. Laser & Optoelectronics Progress, 2022, 59(13): 1304003 Copy Citation Text

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References

[3] Watkins S E, Zhang C Z, Walser R M et al. Electrical performance of laser damaged silicon photodiodes[J]. Applied Optics, 29, 827-835(1990).

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Meng Yao, Jifei Ye, Lan Li, Heyan Gao. Analysis of Saturation Characteristics of Silicon-Based Photodiodes Irradiated by Picosecond Laser[J]. Laser & Optoelectronics Progress, 2022, 59(13): 1304003

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