• Laser & Optoelectronics Progress
  • Vol. 59, Issue 13, 1304003 (2022)
Meng Yao, Jifei Ye*, Lan Li, and Heyan Gao
Author Affiliations
  • State Key Laboratory of Laser Propulsion & Application, Department of Aerospace Science and Technology, Aerospace Engineering University, Beijing 101416, China
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    DOI: 10.3788/LOP202259.1304003 Cite this Article Set citation alerts
    Meng Yao, Jifei Ye, Lan Li, Heyan Gao. Analysis of Saturation Characteristics of Silicon-Based Photodiodes Irradiated by Picosecond Laser[J]. Laser & Optoelectronics Progress, 2022, 59(13): 1304003 Copy Citation Text show less
    Working principle diagram of PN-type photodiode
    Fig. 1. Working principle diagram of PN-type photodiode
    Schematic diagram of experimental device
    Fig. 2. Schematic diagram of experimental device
    Pulse signal response waveforms under different laser energy densities
    Fig. 3. Pulse signal response waveforms under different laser energy densities
    Relationship between peak voltage and increase of laser energy density
    Fig. 4. Relationship between peak voltage and increase of laser energy density
    Rising edge time of diode irradiated by different laser energy densities
    Fig. 5. Rising edge time of diode irradiated by different laser energy densities
    Relationship between FWHM of signal and increase of laser energy density
    Fig. 6. Relationship between FWHM of signal and increase of laser energy density
    Relationship between BW of signal and increase of laser energy density
    Fig. 7. Relationship between BW of signal and increase of laser energy density
    Meng Yao, Jifei Ye, Lan Li, Heyan Gao. Analysis of Saturation Characteristics of Silicon-Based Photodiodes Irradiated by Picosecond Laser[J]. Laser & Optoelectronics Progress, 2022, 59(13): 1304003
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