(Ba1−xNax)F(Zn1−xMnx)Sb: A novel fluoride-antimonide magnetic semiconductor with decoupled charge and spin doping

Xueqin Zhao; Jinou Dong; Licheng Fu; Yilun Gu; Rufei Zhang; Qiaolin Yang; Lingfeng Xie; Yinsong Tang; Fanlong Ning

doi:10.1088/1674-4926/43/11/112501

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Journal of Semiconductors
Vol. 43, Issue 11, 112501 (2022)

(Ba_1−xNa_x)F(Zn_1−xMn_x)Sb: A novel fluoride-antimonide magnetic semiconductor with decoupled charge and spin doping

Xueqin Zhao¹, Jinou Dong¹, Licheng Fu¹, Yilun Gu¹, Rufei Zhang¹, Qiaolin Yang¹, Lingfeng Xie¹, Yinsong Tang¹, and Fanlong Ning^{1、2、3、*}

Author Affiliations

¹Zhejiang Province Key Laboratory of Quantum Technology and Device and Department of Physics, Zhejiang University, Hangzhou 310027, China

²Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China

³State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, China

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DOI: 10.1088/1674-4926/43/11/112501 Cite this Article

Xueqin Zhao, Jinou Dong, Licheng Fu, Yilun Gu, Rufei Zhang, Qiaolin Yang, Lingfeng Xie, Yinsong Tang, Fanlong Ning. (Ba_1−xNa_x)F(Zn_1−xMn_x)Sb: A novel fluoride-antimonide magnetic semiconductor with decoupled charge and spin doping[J]. Journal of Semiconductors, 2022, 43(11): 112501 Copy Citation Text

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$(Color online) (a) The polycrystal powder X-ray diffraction patterns of (Ba1−xNax)F(Zn1−xMnx)Sb (x = 0.00, 0.05, 0.075, 0.10, 0.125, 0.15, and 0.175). Traces of impurities ZnSb are marked as stars (*). (b) The Rietveld refinement result of (Ba0.875Na0.125)F(Zn0.875Mn0.125)Sb. Inset shows the tetragonal ZrCuSiAs-type crystal structure of parent compound BaFZnSb. (c) Lattice parametersa andc versus doping levelx of (Ba1−xNax)F(Zn1−xMnx)Sb (x = 0.00, 0.05, 0.075, 0.10, 0.125, 0.15, and 0.175). (d) The unit cell volume of (Ba1−xNax)F(Zn1−xMnx)Sb (x = 0.00, 0.05, 0.075, 0.10, 0.125, 0.15, and 0.175).$

Fig. 1. (Color online) (a) The polycrystal powder X-ray diffraction patterns of (Ba₁₋_xNa_x)F(Zn₁₋_xMn_x)Sb (x = 0.00, 0.05, 0.075, 0.10, 0.125, 0.15, and 0.175). Traces of impurities ZnSb are marked as stars (*). (b) The Rietveld refinement result of (Ba_0.875Na_0.125)F(Zn_0.875Mn_0.125)Sb. Inset shows the tetragonal ZrCuSiAs-type crystal structure of parent compound BaFZnSb. (c) Lattice parametersa andc versus doping levelx of (Ba₁₋_xNa_x)F(Zn_1−xMn_x)Sb (x = 0.00, 0.05, 0.075, 0.10, 0.125, 0.15, and 0.175). (d) The unit cell volume of (Ba_1−xNa_x)F(Zn_1−xMn_x)Sb (x = 0.00, 0.05, 0.075, 0.10, 0.125, 0.15, and 0.175).

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(Color online) (a) The temperature dependence of DC magnetization for parent phase BaFZnSb and (Ba0.95Na0.05)FZnSb under field-cooling mode in an external magnetic field of 100 Oe. The data (open circles) are the data dots, and the solid lines are the Curie-Weiss fitting results. (b) The temperature dependent magnetization (M) for (Ba1−xNax)F(Zn1−xMnx)Sb (x = 0.05, 0.075, 0.10, 0.125, 0.15 and 0.175) in both zero-field-cooling (ZFC) and field-cooling (FC) procedures under an external magnetic field of 100 Oe. Inset shows the enlarged M(T) curves for all specimens at low temperature. Arrow marksTirr forx = 0.10. (c) The plot of1/(χ−χ0) versusT for (Ba1−xNax)F(Zn1−xMnx)Sb (x = 0.05, 0.075, 0.10, 0.125, 0.15 and 0.175) under FC condition. Arrows mark the Weiss temperatures. Inset shows the enlarged plot of1/(χ−χ0) versusT for all of specimens below 30 K. (d) Iso-thermal magnetization for (Ba1−xNax)F(Zn1−xMnx)Sb (x = 0.05, 0.075, 0.10, 0.125, 0.15 and 0.175) at 2 K. Inset shows the enlargedM(H) curves for all of specimens under an external magnetic fieldBext from –20 000 to 20 000 Oe.

Fig. 2. (Color online) (a) The temperature dependence of DC magnetization for parent phase BaFZnSb and (Ba_0.95Na_0.05)FZnSb under field-cooling mode in an external magnetic field of 100 Oe. The data (open circles) are the data dots, and the solid lines are the Curie-Weiss fitting results. (b) The temperature dependent magnetization (M) for (Ba_1−xNa_x)F(Zn_1−xMn_x)Sb (x = 0.05, 0.075, 0.10, 0.125, 0.15 and 0.175) in both zero-field-cooling (ZFC) and field-cooling (FC) procedures under an external magnetic field of 100 Oe. Inset shows the enlarged M(T) curves for all specimens at low temperature. Arrow marks

T_{irr}

forx = 0.10. (c) The plot of

1 / (χ - χ_{0})

versusT for (Ba_1−xNa_x)F(Zn_1−xMn_x)Sb (x = 0.05, 0.075, 0.10, 0.125, 0.15 and 0.175) under FC condition. Arrows mark the Weiss temperatures. Inset shows the enlarged plot of

1 / (χ - χ_{0})

versusT for all of specimens below 30 K. (d) Iso-thermal magnetization for (Ba₁₋_xNa_x)F(Zn₁₋_xMn_x)Sb (x = 0.05, 0.075, 0.10, 0.125, 0.15 and 0.175) at 2 K. Inset shows the enlargedM(H) curves for all of specimens under an external magnetic field

B_{ext}

from –20 000 to 20 000 Oe.

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Fig. 3. (Color online) The (a) real part

χ'

and (b) imaginary part

χ'^{'}

of AC susceptibility with varying frequenciesf under zero field for (Ba_0.9Na_0.1)F(Zn_0.9Mn_0.1)Sb. (c) A frequency dependence of spin freezing temperature

T_{f}

for (Ba_0.9Na_0.1)F(Zn_0.9Mn_0.1)Sb.

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Fig. 4. (Color online) Temperature-dependent resistivity measurements for (Ba₁₋_xNa_x)F(Zn₁₋_yMn_y)Sb (x = 0.00,y = 0.00;x = 0.05,y = 0.00;x = 0.05,y = 0.05;x = 0.075,y = 0.075;x = 0.10,y = 0.10;x = 0.125,y = 0.125;x = 0.15,y = 0.15;x = 0.175,y = 0.175).

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