[1] Xie Zili, Zhang Rong, Xiu Xiangqian et al.. MOCVD growth and characterization of high-quality AlGaN materials for UV detector DBR structures[J]. Acta Physica Sinica, 2007, 56(11): 6717~6720
[2] Hao Ruiting, Liu Huanlin. Ultraviolet detectors and their developments[J]. Optoelectron. Technol., 2004, 24(2): 129~133
[3] Xue Chenyang, Zhang Wendong. Semiconductor Thin Film Spectroscopy[M]. Beijing: Science Press, 2008. 105~108
[5] Xu Zhenjia. Detection and Analysis of Semiconductor[M]. Beijing: Science Press, 2007. 142~146
[6] Li Shuti, Jiang Fengyi, Fan Guanghan et al.. The bowing parameters and Stokes shift in InGaN film[J]. Acta Optica Sinica, 2004, 24(6): 751~755
[7] Wang Huan, Yao Shude, Pan Yaobo et al.. Strain in AlInGaN thin films caused by different contents of Al and In studied by Rutherford backscattering/channeling and high resolution X-ray diffraction[J]. Acta Physica Sinica, 2007, 56(6): 3350~3353
[8] Ding Zhibo, Yao Shude, Wang Kun et al.. Characterization of crystal lattice consant and stain of GaN epilayers with different AlxGa1-xN and AlN buffer layers grown on Si(111)[J]. Acta Physica Sinica, 2006, 55(6): 2977~2980
[9] Yenkuang Kuo, Boting Liou, Shenghorng Yen. Vegard′s law deviation in lattice constant and band gap bowing parameter of zincblende InxGa1-xN[J]. Opt. Commun., 2004, 237(4-6): 363~369
[11] M. Ferhat, J. Furthmuller, F. Bechstedt. Gap bowing and Stokes shift in InxGa1-xN alloys: first-principles studies[J]. Appl. Phys. Lett., 2002, 80(8): 1394~1396
[12] Wenwei Lin, Yenkuang Kuo, Boting Liou. Band-gap bowing parameters of zincblende ternary Ⅲ-nitrides derived from theoretical simulation[J]. Jpn. J. Appl. Phys., 2004, 43(1): 113~114
[15] Lu Wen, Lei Tianmin. First-principle study of electronic and optical properties of the wurtzite structure GaN[J]. Electron. Technol., 2009, 22(5): 55~57