• Journal of Semiconductors
  • Vol. 40, Issue 11, 111602 (2019)
Senpo Yip1、2, Lifan Shen1、3, and Johnny C Ho1、2
Author Affiliations
  • 1Department of Materials Science and Engineering, City University of Hong Kong, Hong Kong, China
  • 2Shenzhen Research Institute, City University of Hong Kong, Shenzhen 518057, China
  • 3College of Microelectronics and Key Laboratory of Optoelectronics Technology, Faculty of Information Technology, Beijing University of Technology, Beijing 100124, China
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    DOI: 10.1088/1674-4926/40/11/111602 Cite this Article
    Senpo Yip, Lifan Shen, Johnny C Ho. Recent advances in flexible photodetectors based on 1D nanostructures[J]. Journal of Semiconductors, 2019, 40(11): 111602 Copy Citation Text show less

    Abstract

    Semiconductor nanowires have demonstrated excellent electronic and optoelectronic properties. When integrated into photodetectors, excellent device performance can be easily attained. Apart from the exceptional performance, these nanowires can also enable robust and mechanically flexible photodetectors for various advanced utilizations that the rigid counterparts cannot perform. These unique applications include personal healthcare, next-generation robotics and many others. In this review, we would first discuss the nanowire fabrication techniques as well as the assembly methods of constructing large-scale nanowire arrays. Then, the recent development of flexible photodetectors based on these different nanowire material systems is evaluated in detail. At the same time, we also introduce some recent advancement that allows individual photodetectors to integrate into a more complex system for advanced deployment. Finally, a short conclusion and outlook of challenges faced in the future of the community is presented.
    $ R = \frac{{I\;{\rm{or}}\;V}}{P}, $ (1)

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    $ {\rm{EQE}} = \frac{{I/e}}{{P/hv}} = R\frac{{hc}}{{e\lambda }}, $ (2)

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    $ {{D}} = \frac{I}{{p\sqrt {2q{I_{{\rm{dark}}}}} }}, $ (3)

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    Senpo Yip, Lifan Shen, Johnny C Ho. Recent advances in flexible photodetectors based on 1D nanostructures[J]. Journal of Semiconductors, 2019, 40(11): 111602
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