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    Journals >Acta Optica Sinica >Volume 40 >Issue 18 >Page 1804001 > Article
    • Acta Optica Sinica
    • Vol. 40, Issue 18, 1804001 (2020)
    Effect of Multiplication Layer Thickness on Device Properties of In0.53Ga0.47As/InP Avalanche Photodiode
    Hang Wang1、2, Zhengbing Yuan3, Ming Tan2, Yuqiang Gu2, Yuanyuan Wu2, Qingquan Xiao3, and Shulong Lu2、*
    Author Affiliations
  • 1Institute of Nano-Tech and Nano-Bionics, University of Science and Technology of China, Hefei, Anhui 230026, China
  • 2Key Laboratory of Nano-devices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou, Jiangsu 215123, China
  • 3College of Big Data and Information Engineering, Guizhou University, Guiyang, Guizhou 550025, China
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    DOI: 10.3788/AOS202040.1804001 Cite this Article Set citation alerts
    Hang Wang, Zhengbing Yuan, Ming Tan, Yuqiang Gu, Yuanyuan Wu, Qingquan Xiao, Shulong Lu. Effect of Multiplication Layer Thickness on Device Properties of In0.53Ga0.47As/InP Avalanche Photodiode[J]. Acta Optica Sinica, 2020, 40(18): 1804001 Copy Citation Text show less
    Structural cross-section of In0.53Ga0.47As/InP APD
    Fig. 1. Structural cross-section of In0.53Ga0.47As/InP APD
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    I-V curves of APD device under different photosensitive diameters
    Fig. 2. I-V curves of APD device under different photosensitive diameters
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    I-V curves obtained under different multiplication layer thicknesses
    Fig. 3. I-V curves obtained under different multiplication layer thicknesses
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    Internal electric field intensities under different multiplication layer thicknesses
    Fig. 4. Internal electric field intensities under different multiplication layer thicknesses
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    Breakdown voltage and punch-through voltage versus InP multiplication layer thickness
    Fig. 5. Breakdown voltage and punch-through voltage versus InP multiplication layer thickness
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    Simulation results of APD device with thin multiplication layer. (a) I-V curves under different multiplication layer thicknesses; (b) breakdown voltage and punch-through voltage versus InP multiplication layer thickness
    Fig. 6. Simulation results of APD device with thin multiplication layer. (a) I-V curves under different multiplication layer thicknesses; (b) breakdown voltage and punch-through voltage versus InP multiplication layer thickness
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    Abstract
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    Hang Wang, Zhengbing Yuan, Ming Tan, Yuqiang Gu, Yuanyuan Wu, Qingquan Xiao, Shulong Lu. Effect of Multiplication Layer Thickness on Device Properties of In0.53Ga0.47As/InP Avalanche Photodiode[J]. Acta Optica Sinica, 2020, 40(18): 1804001
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    Paper Information
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