Effect of Multiplication Layer Thickness on Device Properties of In0.53Ga0.47As/InP Avalanche Photodiode

Hang Wang; Zhengbing Yuan; Ming Tan; Yuqiang Gu; Yuanyuan Wu; Qingquan Xiao; Shulong Lu

doi:10.3788/AOS202040.1804001

Journals >Acta Optica Sinica >Volume 40 >Issue 18 >Page 1804001 > Article

Acta Optica Sinica
Vol. 40, Issue 18, 1804001 (2020)

Effect of Multiplication Layer Thickness on Device Properties of In_0.53Ga_0.47As/InP Avalanche Photodiode

Hang Wang^1、2, Zhengbing Yuan³, Ming Tan², Yuqiang Gu², Yuanyuan Wu², Qingquan Xiao³, and Shulong Lu^2、*

Author Affiliations

¹Institute of Nano-Tech and Nano-Bionics, University of Science and Technology of China, Hefei, Anhui 230026, China

²Key Laboratory of Nano-devices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou, Jiangsu 215123, China

³College of Big Data and Information Engineering, Guizhou University, Guiyang, Guizhou 550025, China

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DOI: 10.3788/AOS202040.1804001 Cite this Article Set citation alerts

Hang Wang, Zhengbing Yuan, Ming Tan, Yuqiang Gu, Yuanyuan Wu, Qingquan Xiao, Shulong Lu. Effect of Multiplication Layer Thickness on Device Properties of In_0.53Ga_0.47As/InP Avalanche Photodiode[J]. Acta Optica Sinica, 2020, 40(18): 1804001 Copy Citation Text

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