Yanhong Liu, Fenghua Li, Hui Huang, Baodong Mao, Yang Liu, Zhenhui Kang. Optoelectronic and photocatalytic properties of I–III–VI QDs: Bridging between traditional and emerging new QDs[J]. Journal of Semiconductors, 2020, 41(9): 091701
- Journal of Semiconductors
- Vol. 41, Issue 9, 091701 (2020)
Fig. 1. (Color online) Schematic illustration for the bridging role of I–III–VI QDs between traditional II–VI QDs and emerging new carbon dots.
![(Color online) Schematic synthetic processes of I–III–VI QDs. Reprinted from Ref. [14].](/richHtml/jos/2020/41/9/091701/img_2.jpg)
Fig. 2. (Color online) Schematic synthetic processes of I–III–VI QDs. Reprinted from Ref. [14 ].
![(Color online) Schematic alloying and selective cation exchange process of quaternary AgInS2–ZnS QDs. Reprinted from Ref. [60].](/Images/icon/loading.gif){kind=icon}
Fig. 3. (Color online) Schematic alloying and selective cation exchange process of quaternary AgInS2–ZnS QDs. Reprinted from Ref. [60 ].
Fig. 4. (Color online) (a) Theoretical calculated[25 ] and (b) experimental results[14 ] of the size-dependent optical band gap of chalcopyrite I–III–VI semiconductor QDs. The band gaps in panel (a) were calculated based on QDs with sizes of 2 to 5 nm. Reprinted from Refs. [14 , 25 ].
Fig. 5. (Color online) Schematic defect states[66 ] and charge carrier recombination pathways[67 ] of DAPs. Reprinted from Refs. [66 , 67 ].
Fig. 6. (Color online) Size- and composition-dependent photocatalytic properties of ZAIS QDs. Reprinted from Ref. [85 ].
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Table 1. Bridging between traditional II–VI QDs and emerging carbon dots by I–III–VI QDs.
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