Electrical properties and microstructure formation of V/Al-based n-contacts on high Al mole fraction n-AlGaN layers

Luca Sulmoni; Frank Mehnke; Anna Mogilatenko; Martin Guttmann; Tim Wernicke; Michael Kneissl

doi:10.1364/PRJ.391075

Journals >Photonics Research >Volume 8 >Issue 8 >Page 1381 > Article

Photonics Research
Vol. 8, Issue 8, 1381 (2020)

Electrical properties and microstructure formation of V/Al-based n-contacts on high Al mole fraction n-AlGaN layers

Luca Sulmoni^1、*, Frank Mehnke¹, Anna Mogilatenko^2、3, Martin Guttmann¹, Tim Wernicke¹, and Michael Kneissl^1、2

Author Affiliations

¹Institut für Festkörperphysik, Technische Universität Berlin, 10623 Berlin, Germany

²Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, 12489 Berlin, Germany

³Institut für Physik, Humboldt Universität zu Berlin, 12489 Berlin, Germany

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DOI: 10.1364/PRJ.391075 Cite this Article Set citation alerts

Luca Sulmoni, Frank Mehnke, Anna Mogilatenko, Martin Guttmann, Tim Wernicke, Michael Kneissl. Electrical properties and microstructure formation of V/Al-based n-contacts on high Al mole fraction n-AlGaN layers[J]. Photonics Research, 2020, 8(8): 1381 Copy Citation Text

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