[1] Kuzmík J. Power electronics on InAlN/(In)GaN: Prospect for a record performance[J]. IEEE Electron Device Letters, 2001, 22(11): 510-512.

[2] Sun H, Alt A R, Benedickter H, et al. 205GHz (Al,In)N/GaN HEMTs[J]. IEEE Electron Device Letters, 2010, 31(9): 293-301.

[3] ]Lee D S, Chung J W, Wang H, et al. 245GHz InAlN/GaN HEMTs with oxygen plasma treatment[J]. IEEE Electron Device Letters, 2011, 32(6): 755-757.

[4] Lee D S, Gao X, Guo S, et al. 300GHz InAlN/GaN HEMTs with InGaN back barrier[J]. IEEE Electron Device Letters, 2011, 32(11): 1525-1527.

[5] Yue Y, Hu Z, Guo J, et al. Ultrascaled InAlN/GaN high electron mobility transistors with cutoff frequency of 400 GHz[J]. Japanese Journal of Applied Physics, 2013, 52(8): 08JN14-08JN14-2.

[6] Song B, SensaleRodrigueza B, Wang R H, et al. Monolithically integrated E/Dmode InAlN HEMTs with fT/fmax > 200/220 GHz[C]. In Device Research Conference, 2012, University Park TX: 1.

[7] Tirelli S, Marti D, Sun H, et al. Fully passivated AlInN/GaN HEMTs with of 205/220 GHz[J]. IEEE Electron Device Letters, 2011, 32(10): 13641366.

[8] Schuette M L, Ketterson A, Song B, et al. Gaterecessed integrated E/D GaN HEMT technology with fT/fmax>300 GHz[J]. IEEE Electron Device Letters, 2013, 34(6): 741-743.

[9] Han T T, Dun S B, Lv Y J, et al. 70nmgated InAlN/GaN HEMTs grown on SiC substrate with fT/fmax160 GHz[J]. Journal of Semiconductors, 2016, 37(2):024007.

[10] Guo H Y, Lv Y J, Gu G D, et al. Highfrequency AlGaN/GaN highelectronmobility transistors with regrown ohmic contacts by metalorganic chemical vapor deposition[J]. Chin. Physics Letter, 2015, 32(11): 118501-(1-3).

[11] Chen G, Kumar V, Schwindt R S, et al. A low gate bias model extraction technique for AlGaN/GaN HEMTs[J]. IEEE Trans Micro Theory Tech, 2006, 54(7): 2949-2953.

[12] SensaleRodriguez B, Guo J, Wang R H, et al. Comparative study of E and Dmode InAlN/AlN/GaN HEMTs with fT near 200 GHz[C]. In ISDRS College Park, 2011, MD, USA.

[13] Sun H, Alt A R, Benedickter H, et al. Ultrahighspeed AlInN/GaN high electron mobility transistors grown on (111) highresistivity silicon with fT = 143 GHz[J]. Applied Physics Express, 2010, 3(9): 094101-(1-3).

[14] Yue Y, Hu Z, Guo J, et al. InAlN/AlN/GaN HEMTs With Regrown Ohmic Contacts and fT of 370 GHz[J]. IEEE Electron Device Letters, 2012, 33(7): 988-990.

[15] Ma C L, Gu G D, Lv Y J. A high performance InAlN/GaN HEMT with low Ron and gate leakage[J]. Journal of Semiconductors, 2016, 37(2):024009-3.