• Journal of Semiconductors
  • Vol. 44, Issue 4, 040203 (2023)
Yun Yin* and Hongtao Xu**
Author Affiliations
  • State Key Laboratory of Integrated Chips and Systems, Department of Microelectronics, Fudan University, Shanghai 201203, China
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    DOI: 10.1088/1674-4926/44/4/040203 Cite this Article
    Yun Yin, Hongtao Xu. Digital-intensive RFIC design techniques for transmitters in ISSCC 2023[J]. Journal of Semiconductors, 2023, 44(4): 040203 Copy Citation Text show less

    Abstract

    In Ref. [7], a 4.1 W quadrature DPA with 33.6% peak PAE in 28 nm bulk CMOS is presented. It introduces the cascode and 8-way differential power-combining techniques to enhance output power by 16 times. Besides, the IQ cell-sharing and transformer-based Doherty techniques are introduced to further enhance output power by 2 times and achieve 12 efficiency peaks in the complex domain. Powered by 1.1 V/2.2 V supply voltages and packaged in an QFN format, this DPA chip achieves 4.1 W peak power and close-to-Watt-level average power with competitive efficiency performance even compared with polar DPAs, which is very attractive for compact and fast system integration in 5G applications.

    mm-wave wireless transmission with multi-Gb/s data rate also demands wideband signal processing, high system efficiency and high output power for large coverage. In ISSCC 2023, a 71–89 GHz DPA came from University of Electronic Science and Technology of China[26]. In Ref. [26], the double-edge-triggered technique is proposed to double the signal bandwidth with limited sampling clock. Besides, the LO leakage suppression and balance-compensated power-combining techniques are introduced to enhance linearity and efficiency. Implemented in 40 nm CMOS, this mm-wave DPA obtains 12 Gb/s high-speed data rate, 20.5 dBm peak output power and 20.4% system efficiency, which is quite competitive for E-band wireless applications.

    InTable 1, various DTX/DPAs operating from sub-6 GHz to mm-wave bands with multi-mode multi-band, output power, good efficiency, linearity and bandwidth have been summarized. With these advanced metrics, the digital RF front-end will be a good candidate for modern and further wireless applications.

    Relevant intensive researches at sub-6 GHz have been directed toward class-D based switched-capacitor PAs, which are more amenable to CMOS scaling and have good linearity and efficiency due to fast low-loss switches and precise capacitor matching. In ISSCC 2023, two works on sub-6 GHz DTX/DPA came from Fudan University[5,7]. In Ref. [5], a single-channel quadrature DTX supporting multi-mode multi-band NB-IoT/BLE applications is proposed. It introduces a sliding digital-IF quadrature architecture to replace the fractional up-sampling module and achieve pure output spectrum. Besides, a compact wideband Doherty DPA with IQ cell-sharing is implemented to enhance output power and back-off efficiency. This multi-mode NB-IoT/BLE DTX chip achieves Watt-level peak power with >40% system efficiency while occupying only 0.79 mm2 core area, which is well-fitting low-cost IoT applications.

    The digital PA (DPA) plays a dominant role in digital transmitters (DTXs), which performs digital-to-analog conversion, frequency up-conversion and power amplification all-in-one. Since modern wireless standards widely adopt orthogonal frequency division multiplexing (OFDM) and high-order quadrature amplitude modulation (QAM) to increase throughput and spectral utilization, it requires the DPA to achieve high output power (e.g., >30 dBm), high linearity and high efficiency especially at back-off power levels.

    Moreover, two DTX works are implemented for FMCW chirps from Infineon Technologies[27] and low-power cryogenic controller IC design from Tsinghua University[28]. In Ref. [27], accurate frequency modulation of a direct digital frequency synthesizer is combined with the RFDAC to generate precise wide-bandwidth frequency ramps, which achieves 4 GHz modulation bandwidth with <3 dB power variation. In Ref. [28], a polar architecture with DPA-based amplitude modulation and injection-locking LO based phase modulation is proposed. Its power consumption is 13.7 mW per qubit under active control and the average chip area per channel is only 0.9 mm2.

    Sub-6 GHz multi-standard wireless communication and millimeter-wave (mm-wave) wireless transmission provide users with multi-functionality and unprecedented wireless connectivity. With CMOS process scaling down, system-on-chip (SoC) implementation of wireless systems along with RFIC functionality is highly desirable for low cost and small form-factor. The digital transceiver architecture aligns with Moore’s law to provide compact die area, better interface to digital backend and higher efficiency due to the faster switching nature of core devices[1-28].

    Table Infomation Is Not Enable

    References

    [1] C H Chan, L Cheng, W Deng et al. Trending IC design directions in 2022. J Semicond, 43, 071401(2022).

    [2] Y Yin, Y T Zhu, L Xiong et al. A compact transformer-combined polar/quadrature reconfigurable digital power amplifier in 28-nm logic LP CMOS. IEEE J Solid State Circuits, 54, 709(2019).

    [3] C X Hu, Y Yin, T Li et al. A fully-integrated wideband digital polar transmitter with 11-bit digital-to-phase converter in 40nm CMOS. IEEE J Solid State Circuits, 58, 462(2023).

    [4] Y Palaskas, P Madoglio, J Angel et al. A cellular multiband DTC-based digital polar transmitter with −153-dBc/Hz noise in 14-nm FinFET. IEEE J Solid-State Circuits, 55, 1830(2020).

    [5] C Hu, D Zheng, Y Yin et al. A 0.7-2.5GHz sliding digital-IF quadrature digital transmitter achieving >40% system efficiency for multi-mode NB-IoT/BLE applications. Proc IEEE Int Solid-State Circuits Conf (ISSCC), 472(2023).

    [6] B Z Yang, H J Qian, T Y Wang et al. A CMOS wideband watt-level 4096-QAM digital power amplifier using reconfigurable power-combining transformer. IEEE J Solid State Circuits, 58, 357(2022).

    [7] J Li, Y Yin, H Chen et al. A 4.1W quadrature doherty digital power amplifier with 33.6% peak pae in 28nm bulk CMOS. Proc IEEE Int Solid-State Circuits Conf (ISSCC), 370(2023).

    [8] Z D Bai, W Yuan, A Azam et al. 4.3 A multiphase interpolating digital power amplifier for TX beamforming in 65nm CMOS. 2019 IEEE International Solid-State Circuits Conference (ISSCC), 78(2019).

    [9] D Y Zheng, Y Yin, Y T Zhu et al. 24.5 A 15b quadrature digital power amplifier with transformer-based complex-domain power-efficiency enhancement. 2020 IEEE International Solid-State Circuits Conference (ISSCC), 370(2020).

    [10] S W Yoo, S C Hung, S M Yoo. 24.4 A watt-level multimode multi-efficiency-peak digital polar power amplifier with linear single-supply class-G technique. 2020 IEEE International Solid-State Circuits Conference (ISSCC), 368(2020).

    [11] L Xiong, T Li, Y Yin et al. A broadband switched-transformer digital power amplifier for deep back-off efficiency enhancement. 2019 IEEE International Solid-State Circuits Conference (ISSCC), 76(2019).

    [12] A Y Zhang, M S W Chen. A subharmonic switching digital power amplifier for power back-off efficiency enhancement. IEEE J Solid State Circuits, 54, 1017(2019).

    [13] S W Yoo, S C Hung, S M Yoo. A watt-level quadrature class-G switched-capacitor power amplifier with linearization techniques. IEEE J Solid State Circuits, 54, 1274(2019).

    [14] E Bechthum, M El Soussi, J F Dijkhuis et al. A CMOS polar class-G switched-capacitor PA with a single high-current supply, for LTE NB-IoT and eMTC. IEEE J Solid State Circuits, 54, 1941(2019).

    [15] D Jung, S S Li, J S Park et al. A CMOS 1.2-V hybrid current- and voltage-mode three-way digital Doherty PA with built-In phase nonlinearity compensation. IEEE J Solid State Circuits, 55, 525(2020).

    [16] H J Qian, B Z Yang, J Zhou et al. A quadrature digital power amplifier with hybrid Doherty and impedance boosting for complex domain power back-off efficiency enhancement. IEEE J Solid State Circuits, 56, 1487(2021).

    [17] B Z Yang, H J Qian, X Luo. Quadrature switched/floated capacitor power amplifier with reconfigurable self-coupling canceling transformer for deep back-off efficiency enhancement. IEEE J Solid State Circuits, 56, 3715(2021).

    [18] S C Hung, S W Yoo, S M Yoo. A quadrature class-G complex-domain Doherty digital power amplifier. IEEE J Solid State Circuits, 56, 2029(2021).

    [19] S W Yoo, S C Hung, J S Walling et al. A 0.26mm2 DPD-less quadrature digital transmitter with <–40dB EVM over >30dB Pout range in 65nm CMOS. Proc IEEE Int Solid-State Circuits Conf (ISSCC), 184(2020).

    [20] S M Babamir, B Razavi. A digital RF transmitter with background nonlinearity correction. IEEE J Solid State Circuits, 55, 1502(2020).

    [21] J Lemberg, M Martelius, E Roverato et al. A 1.5–1.9-GHz all-digital tri-phasing transmitter with an integrated multilevel class-D power amplifier achieving 100-MHz RF bandwidth. IEEE J Solid State Circuits, 54, 1517(2019).

    [22] Y Yin, L Xiong, Y T Zhu et al. A compact dual-band digital polar Doherty power amplifier using parallel-combining transformer. IEEE J Solid State Circuits, 54, 1575(2019).

    [23] B Khamaisi, D Ben-Haim, A Nazimov et al. A 16nm, 28dBm dual-band all-digital polar transmitter based on 4-core digital PA for wi-Fi6E applications. 2022 IEEE International Solid-State Circuits Conference (ISSCC), 324(2022).

    [24] H M Nguyen, J S Walling, A D Zhu et al. A mm-wave switched-capacitor RFDAC. IEEE J Solid State Circuits, 57, 1224(2022).

    [25] H J Qian, Y Y Shu, J Zhou et al. A 20–32-GHz quadrature digital transmitter using synthesized impedance variation compensation. IEEE J Solid State Circuits, 55, 1297(2020).

    [26] Z. Yang B. Deng Z, Qian H J, et al. 71-89GHz 12Gb/s double-edge-triggered quadrature power-DAC with LO leakage suppression achieving 20.5dBm peak output power and 20.4% system efficiency. Proc IEEE Int Solid-State Circuits Conf (ISSCC), 286(2023).

    [27] S K Sireesh, S H Abkenar, N Christoffers et al. A 4b RFDAC at 8GS/s for FMCW chirps with 4GHz bandwidth in 10 μs. Proc IEEE Int Solid-State Circuits Conf (ISSCC), 376(2023).

    [28] Y Guo, Y Li, W Huang et al. A polar-modulation-based cryogenic qubit state controller in 28nm bulk CMOS. Proc IEEE Int Solid-State Circuits Conf (ISSCC), 508(2023).

    Yun Yin, Hongtao Xu. Digital-intensive RFIC design techniques for transmitters in ISSCC 2023[J]. Journal of Semiconductors, 2023, 44(4): 040203
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