Influence of the quantum-confined Stark effect on the temperature-induced photoluminescence blueshift of InGaN/GaN quantum wells in laser diode structures

Wenyu Cao; Xiaodong Hu

doi:10.3788/COL201614.061402

Journals >Chinese Optics Letters >Volume 14 >Issue 6 >Page 061402 > Article

Chinese Optics Letters
Vol. 14, Issue 6, 061402 (2016)

Influence of the quantum-confined Stark effect on the temperature-induced photoluminescence blueshift of InGaN/GaN quantum wells in laser diode structures

Wenyu Cao and Xiaodong Hu^*

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State Key Laboratory for Artificial Microstructure and Mesoscopic Physics and School of Physics, Peking University, Beijing 100871, China

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DOI: 10.3788/COL201614.061402 Cite this Article Set citation alerts

Wenyu Cao, Xiaodong Hu. Influence of the quantum-confined Stark effect on the temperature-induced photoluminescence blueshift of InGaN/GaN quantum wells in laser diode structures[J]. Chinese Optics Letters, 2016, 14(6): 061402 Copy Citation Text

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