• Microelectronics
  • Vol. 52, Issue 5, 734 (2022)
QIN Yao1, YE Zikai1, YOU Yong2, ZHUANG Chunwang1, MING Xin1, WANG Zhuo1, and ZHANG Bo1、3
Author Affiliations
  • 1[in Chinese]
  • 2[in Chinese]
  • 3[in Chinese]
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    DOI: 10.13911/j.cnki.1004-3365.220327 Cite this Article
    QIN Yao, YE Zikai, YOU Yong, ZHUANG Chunwang, MING Xin, WANG Zhuo, ZHANG Bo. A High-Speed High Common-Mode Transient Immunity Level Shifter[J]. Microelectronics, 2022, 52(5): 734 Copy Citation Text show less
    References

    [1] MING X, ZHANG X, ZHANG Z W et al. A high-voltage half-bridge gate drive circuit for GaN devices with high-speed low-power and high-noise-immunity level shifter [C]// IEEE 30th Int Symp Power Semicond Dev & IC. Chicago, IL, USA. 2018: 355-358.

    [2] LMG1205, 80-V, 1.2-A to 5-A, half bridge gan driver with integrated bootstrap diode [R]. Texas Instruments Corporation. 2018-02.

    [3] LMG1210, 200-V, 1.5-A, 3-A half-bridge MOSFET and GaN FET driver with adjustable dead time for applications up to 50 MHz [R]. Texas Instruments Corp. 2019-01.

    [4] PE29101, UltraCMOS high-speed FET driver, 40 MHz [EB/OL]. https://www.psemi.com/pdf/ datasheets/pe29101ds.pdf, 2019-07.

    [5] LIU D W, HOLLIS S J, STARK B H. A new design technique for sub-nanosecond delay and 200 V/ns power supply slew-tolerant floating voltage level shifters for GaN SMPS [J]. IEEE Trans Circ Syst I: Regu Pap, 2019, 66(3): 1280-1290.

    [6] KEX G, MA D B. A 3-to-40 V Vin 10-to-50 MHz 12 W isolated GaN driver with self-excited tdead minimizer achieving 0.2 ns/0.3 ns tdead, 7.9% minimum duty ratio and 50 V/ns CMTI [C]// IEEE ISSCC. San Francisco, CA, USA. 2018: 386-388.

    [7] AN015, introducing a family of eGaN FETs for multi-megahertz hard switching applications [R]. Efficient Power Conversion Corp. 2020.

    [8] ZHU J, YU S Y, LU Y Y, et al. Study and implementation of 600-V high-voltage gate driver IC with the common-mode dual-interlock technique for GaN devices [J]. IEEE Trans Indus Elec, 2021, 68(2): 1506-1514.

    [9] High speed half-bridge driver for GaN power switches NCP51820 [EB/OL]. https://www.onsemi.cn/pdf/datasheet/ncp51820-d.pdf, 2022-03.

    [10] KE X G, SANKMAN J, CHEN Y P, et al. A tri-slope gate driving GaN DC-DC converter with spurious noise compression and ringing suppression for automotive applications [J]. IEEE J Sol Sta Circ, 2018, 53(1): 247-260.

    [11] YAN D, MA D B. A monolithic GaN direct 48 V/1 V AHB switching power IC with auto-lock auto-break level shifting, self-bootstrapped hybrid gate driving, and on-die temperature sensing [C]// IEEE ISSCC. San Francisco, CA, USA. 2022: 1-3.

    [12] MOGHE Y, LEHMANN T, PIESSENS T. Nanosecond delay floating high voltage level shifters in a 0.35 μm HV-CMOS technology [J]. IEEE J Sol Sta Circ, 2011, 46(2): 485-497.

    QIN Yao, YE Zikai, YOU Yong, ZHUANG Chunwang, MING Xin, WANG Zhuo, ZHANG Bo. A High-Speed High Common-Mode Transient Immunity Level Shifter[J]. Microelectronics, 2022, 52(5): 734
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