A high-speed, high common-mode transient immunity level shifter suitable for GaN drivers is proposed. The proposed circuit was controlled by the PWM signal and the short pulse, and an accelerating circuit controlled by short pulse improved response speed during level shifting. During high dV/dt transitions and ringing period of floating power rails, the charging and discharging of the parasitic capacitance in level shifter caused output logic errors. To solve this problem, a high-speed low-power cross-controlled noise blanker was adopted to realize high common-mode noise immunity. The circuit was designed in a 0.35 μm high-voltage CMOS process. The simulation results show that the average propagation delay of the level shifter is 1.58 ns with the floating ground at 100 V, the delay mismatch is less than 100 ps, and the common-mode transient immunity reaches 200 V/ns.