[1] Strite S, Morkoc H. GaN, AIN and InN: A review [J]. J.Vac. Sci. Technol. B, 1992,10(4) :1237-1266.
[4] David J S, Chandrasekhar D. Characterization of structural defects in wurtzite GaNgrown on 6H SiC using plasma-enhanced molecular beam epitaxy [ J ]. Appl. Phys. Lett.,1995, 67(13) :1830-1832.
[5] Ponce F A, Krusor S. Microstructure of GaN epitaxy on SiC using AIN buffer layers [ J ]. Appl. Phys. Lett., 1995, 67(3) :410-412.
[6] Chien F R, Ning X J, Stemmer S. Growth defects in GaN films on 6H-SiC substrates[J]. Appl. Phys. Lett., 1996,68(19) :2678-2680.
[7] Melnik Yu V, Vassilevski K V, Nikitina I P. Physical properties of bulk GaN crystals grown by HVPE [ J ], MRS Inernet. Nitride Semicond. Res. , 1997,2, 39.
[8] Kozawa T, Kachi T, Kano H, Thermal stress in GaN epitaxial layers grown on sapphire substrates[ J]. J. Appl. Phys,1995, 77(9) :4389-4392.
[9] Kirillow D, Lee H, Harris J S. Raman scattering study of GaN films[J]. J. Appl. Phys. , 1996, 80: 4085-4062.