• Journal of Infrared and Millimeter Waves
  • Vol. 41, Issue 2, 443 (2022)
Jun LIU1、*, Rui-Liang SONG1, Ning LIU1, and Shi-Xiong LIANG2
Author Affiliations
  • 154th Research Institute,China Electronics Technology Group Corporation(CETC54),Beijing 100070,China
  • 2The National Key Laboratory of ASIC,Hebei Semiconductor Research Institute,Shijiazhuang 050051,China
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    DOI: 10.11972/j.issn.1001-9014.2022.02.010 Cite this Article
    Jun LIU, Rui-Liang SONG, Ning LIU, Shi-Xiong LIANG. Design and realization of InP-based resonant tunneling diode THz oscillator[J]. Journal of Infrared and Millimeter Waves, 2022, 41(2): 443 Copy Citation Text show less
    Illustration of InP-based RTD structure
    Fig. 1. Illustration of InP-based RTD structure
    Peak voltage(Vp)and peak current(Ip)vs(a)doping density,(b)tB,(c)tW,(d)tS
    Fig. 2. Peak voltage(Vp)and peak current(Ip)vs(a)doping density,(b)tB,(c)tW(d)tS
    (a)Photo of the fabricated RTD,(b)measured I-V characteristic of the RTD device
    Fig. 3. (a)Photo of the fabricated RTD,(b)measured I-V characteristic of the RTD device
    Small-signal equivalent circuit of RTD
    Fig. 4. Small-signal equivalent circuit of RTD
    (a)schematic of the proposed bow-tie antenna,(b)antenna with Si-lens mounting
    Fig. 5. (a)schematic of the proposed bow-tie antenna,(b)antenna with Si-lens mounting
    (a)VSWR and(b)gain of the proposed antenna with Si-lens
    Fig. 6. (a)VSWR and(b)gain of the proposed antenna with Si-lens
    Schematic of oscillator package
    Fig. 7. Schematic of oscillator package
    The photograph of the packaged oscillator
    Fig. 8. The photograph of the packaged oscillator
    (a)Block diagram of measurement scheme,(b)photo of the test environment
    Fig. 9. (a)Block diagram of measurement scheme,(b)photo of the test environment
    CompositionDoping/ cm-3Thickness/nm
    InP Substrate
    n+-In0.7Ga0.3As2*10198
    n+-In0.53Ga0.47As2*101915
    n+-In0.53Ga0.47As3*101825
    un-In0.53Ga0.47As20
    un-AlAs1.2
    un-In0.8Ga0.2As5
    un-AlAs1.2
    un-In0.53Ga0.47As2
    n+-In0.53Ga0.47As3*101820
    n+-In0.53Ga0.47As2*1019400
    un-In0.53Ga0.47As200
    Table 1. The layer structure of the RTD device used in this study
    Ip/mAIv/mAVp/VVv/VPVCRJp(kA/cm2Jv(kA/cm2fmax/THzPmax/mW
    43.116.30.911.262.64359.2135.81.491.71
    Table 2. RTD DC parameter and theoretical oscillation frequency and maximum RF output power
    Jun LIU, Rui-Liang SONG, Ning LIU, Shi-Xiong LIANG. Design and realization of InP-based resonant tunneling diode THz oscillator[J]. Journal of Infrared and Millimeter Waves, 2022, 41(2): 443
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