• Photonics Research
  • Vol. 6, Issue 11, 1062 (2018)
Mengya Liao1, Siming Chen1、*, Zhixin Liu1, Yi Wang2, Lalitha Ponnampalam1, Zichuan Zhou1, Jiang Wu1, Mingchu Tang1, Samuel Shutts3, Zizhuo Liu1, Peter M. Smowton3, Siyuan Yu2, Alwyn Seeds1, and Huiyun Liu1
Author Affiliations
  • 1Department of Electronic and Electrical Engineering, University College London, London WC1E 7JE, UK
  • 2State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-sen University, Guangzhou 510275, China
  • 3Department of Physics and Astronomy, Cardiff University, Cardiff CF24 3AA, UK
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    DOI: 10.1364/PRJ.6.001062 Cite this Article Set citation alerts
    Mengya Liao, Siming Chen, Zhixin Liu, Yi Wang, Lalitha Ponnampalam, Zichuan Zhou, Jiang Wu, Mingchu Tang, Samuel Shutts, Zizhuo Liu, Peter M. Smowton, Siyuan Yu, Alwyn Seeds, Huiyun Liu. Low-noise 1.3  μm InAs/GaAs quantum dot laser monolithically grown on silicon[J]. Photonics Research, 2018, 6(11): 1062 Copy Citation Text show less
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