Low-noise 1.3 μm InAs/GaAs quantum dot laser monolithically grown on silicon

Mengya Liao; Siming Chen; Zhixin Liu; Yi Wang; Lalitha Ponnampalam; Zichuan Zhou; Jiang Wu; Mingchu Tang; Samuel Shutts; Zizhuo Liu; Peter M. Smowton; Siyuan Yu; Alwyn Seeds; Huiyun Liu

doi:10.1364/PRJ.6.001062

Journals >Photonics Research >Volume 6 >Issue 11 >Page 1062 > Article

Photonics Research
Vol. 6, Issue 11, 1062 (2018)

Low-noise 1.3 μm InAs/GaAs quantum dot laser monolithically grown on silicon | On the Cover

Mengya Liao¹, Siming Chen^1、*, Zhixin Liu¹, Yi Wang², Lalitha Ponnampalam¹, Zichuan Zhou¹, Jiang Wu¹, Mingchu Tang¹, Samuel Shutts³, Zizhuo Liu¹, Peter M. Smowton³, Siyuan Yu², Alwyn Seeds¹, and Huiyun Liu¹

Author Affiliations

¹Department of Electronic and Electrical Engineering, University College London, London WC1E 7JE, UK

²State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-sen University, Guangzhou 510275, China

³Department of Physics and Astronomy, Cardiff University, Cardiff CF24 3AA, UK

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DOI: 10.1364/PRJ.6.001062 Cite this Article Set citation alerts

Mengya Liao, Siming Chen, Zhixin Liu, Yi Wang, Lalitha Ponnampalam, Zichuan Zhou, Jiang Wu, Mingchu Tang, Samuel Shutts, Zizhuo Liu, Peter M. Smowton, Siyuan Yu, Alwyn Seeds, Huiyun Liu. Low-noise 1.3 μm InAs/GaAs quantum dot laser monolithically grown on silicon[J]. Photonics Research, 2018, 6(11): 1062 Copy Citation Text

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