• Acta Optica Sinica
  • Vol. 40, Issue 5, 0514002 (2020)
Lei Qi and Rongzhu Zhang*
Author Affiliations
  • College of Electronics and Information Engineering, Sichuan University, Chengdu, Sichuan 610064, China
  • show less
    DOI: 10.3788/AOS202040.0514002 Cite this Article Set citation alerts
    Lei Qi, Rongzhu Zhang. Damage Characteristics of Three-Junction GaAs Cell Under Combined Pulse Laser Irradiation[J]. Acta Optica Sinica, 2020, 40(5): 0514002 Copy Citation Text show less
    References

    [1] Xiang X B, Du W H, Chang X L et al. The study on high efficient AlxGa1-xAs/GaAs solar cells[J]. Solar Energy Materials and Solar Cells, 68, 97-103(2001).

    [2] Segev G, Mittelman G, Kribus A. Equivalent circuit models for triple-junction concentrator solar cells[J]. Solar Energy Materials and Solar Cells, 98, 57-65(2012).

    [3] Gauffier A, David J P, Gilard O. Analytical model for multi-junction solar cells prediction in space environment[J]. Microelectronics Reliability, 48, 1494-1499(2008).

    [4] Lindroos J, Savin H. Review of light-induced degradation in crystalline silicon solar cells[J]. Solar Energy Materials and Solar Cells, 147, 115-126(2016).

    [5] Hong H F, Wei J, Chiang M H et al. Materials, 284/285/286/287, 281-286(2013).

    [6] Xiao J, He H X, Xia H J. Stress simulation of aluminum alloy irradiated by long pulsed laser and continuous wave laser[J]. Chinese Journal of Lasers, 40, 0803009(2013).

    [7] Lü X, Pan Y X, Jia Z C et al. Surface damage induced by a combined millisecond and nanosecond laser[J]. Applied Optics, 56, 5060-5067(2017).

    [8] Lü X, Pan Y X, Jia Z C et al. Laser-induced damage threshold of silicon under combined millisecond and nanosecond laser irradiation[J]. Journal of Applied Physics, 121, 113102(2017).

    [9] Zhu R Z. Researches on the irradiation effects of single junction GaAs/Ge and monocrystalline silicon solar cells under laser[D]. Changsha: National University of Defense Technology(2014).

    [10] Zhong F C, Lü X M, Li J G et al. Numerical analysis of thermal effect of the combined laser on single crystal silicon[J]. Laser Technology, 41, 637-643(2017).

    [11] Zeng J L, Lu Q S, Shu B H et al. Combined damage effect of GaAs irradiated by 1.06 μm CW and pulse laser[J]. High Power Laser & Particle Beams, 10, 217-220(1998).

    [12] Du L F, Zhu X B, Zhang R Z. The thermal-stress accumulation in anti-reflective coatings with multi-pulse laser irradiation[J]. Optics Communications, 350, 263-269(2015).

    [13] Xu J, Chen L X, You X H et al. Thermal stress damage of thin-film components induced by surface impurities[J]. Acta Optica Sinica, 37, 0614003(2017).

    [14] Meyer J R, Kruer M R, Bartoli F J. Optical heating in semiconductors: laser damage in Ge, Si, InSb, and GaAs[J]. Journal of Applied Physics, 51, 5513-5522(1980).

    [15] Jiang N, Niu Y X, Zhang S L et al. Numerical simulation of thermal shock effect on germanium induced by out-of-band pulsed-laser[J]. Infrared and Laser Engineering, 37, 481-484(2008).

    [16] Jian S R, Sung T H, Huang J C et al. Deformation behaviors of InP pillars under uniaxial compression[J]. Applied Physics Letters, 101, 151905(2012).

    [17] Wood R F, White C W, Young R T[M]. Semiconductors and semimetals, 23(1986).

    [18] Jia Z C, Zhang T Z, Zhu H Z et al. Stress damage process of silicon wafer under millisecond laser irradiation[J]. Chinese Optics Letters, 16, 011404(2018). http://www.opticsjournal.net/Articles/Abstract?aid=OJ180108000148x5A8D0

    Lei Qi, Rongzhu Zhang. Damage Characteristics of Three-Junction GaAs Cell Under Combined Pulse Laser Irradiation[J]. Acta Optica Sinica, 2020, 40(5): 0514002
    Download Citation