Dong Han, Fei-Yang Sun, Ji-Yuan Lu, Fu-Ming Song, Yue Xu. Reducing dark count of single-photon avalanche diode detector with polysilicon field plate [J]. Acta Physica Sinica, 2020, 69(14): 148501-1
- Acta Physica Sinica
- Vol. 69, Issue 14, 148501-1 (2020)
Fig. 1. Structure of the P+/P-well/deep N-well SPAD device with polysilicon field plate.
Fig. 2. Main front-end process steps.
Fig. 3. Micrograph of the devices.
Fig. 4. I-V characteristic curve of the devices.
Fig. 5. Avalanche pulse voltage signal.
Fig. 6. DCR as a function of excess bias voltage at room temperature.
Fig. 7. DCR of SPAD_2 as a function of (a) temperature at different excess bias voltage, and (b) excess bias voltage at different temperature.
Fig. 8. TCAD simulation of 2D electric field: (a) SPAD_1; (b) SPAD_2.
Fig. 9. Calculated DCR as a function of excess bias voltage at room temperature.
Fig. 10. Variety of DCR under 0–10 V excess bias voltage at room temperature.
|
Table 1. Summary of the key parameters for model-ing (T = 300 K, VEX = 0.4 V).
Set citation alerts for the article
Please enter your email address
© Copyright 2018-2021 | Chinese Laser Press. All Rights Reserved 沪ICP备15018463号-20