[1] Villa F, Lussana R, Bronzi D, Tisa S, Tosi A, Zappa F, Mora A D, Contini D, Durini D, Weyers S, Brockherde W[J]. IEEE J. Sel. Top. Quantum Electron., 20, 364(2014).

[2] Bai P, Zhang Y H, Shen W Z[J]. Acta Phys. Sin., 67, 221401(2018).

[3] Hu W D, Li Q, Chen X S, Lu W[J]. Acta Phys. Sin., 68, 120701(2019).

[4] Perenzoni M, Massari N, Perenzoni D, Gasparini L, Stoppa D[J]. IEEE J. Solid-State Circuits, 51, 155(2016).

[5] Pancheri L, Stoppa D, Dalla Betta G F[J]. IEEE J. Sel. Top. Quantum Electron., 20, 328(2014).

[6] Bronzi D, Villa F, Bellisai S, Tisa S, Paschen U[J]. Proc. SPIE-Int. Soc. Opt. Eng., 8631, 241(2013).

[7] Xu Y, Xiang P, Xie X P[J]. Solid-State Electron., 129, 168(2017).

[8] Xu Y, Xiang P, Xie X P, Huang Y[J]. Semicond. Sci. Technol., 31, 065024(2016).

[9] Moreno-García M, Xu H S, Gasparini L, Perenzoni M[J]. 2018 48th European Solid-State Device Research Conference ESSDERC, 94(2018).

[10] Webster E A G, Richardson J A, Grant L A, Renshaw D, Henderson R K[J]. IEEE Electron Device Lett., 33, 694(2012).

[11] Bose S, Ouh H, Sengupta S, Johnston M L[J]. IEEE Sens. J., 18, 5291(2018).

[12] Jing X L, Zeng D D, Peng Y N, Yang H J, Pu H Y, Peng Y, Luo J[J]. J. Infrared Millim. W., 38, 403(2019).

[13] Shin D, Park B, Chae Y, Yun L[J]. IEEE Trans. Electron Devices, 66, 2986(2019).

[14] Accarino C, Al-Rawhani M, Shah Y D, Maneuski D, Mitra S, Buttar C, Cumming D R S[J]. 2018 IEEE International Symposium on Circuits and Systems ISCAS, 1(2018).

[15] Liu Y, Forrest S R, Hladky J, Lange M J, Olsen G H, Ackley D E[J]. J. Lightwave Technol., 10, 182(1992).

[16] Li Q, Wang F, Wang P, Zhang L L, He J L, Chen L, Martyniuk P, Rogalski A, Chen X S, Lu W, Hu W D[J]. IEEE Trans. Electron Devices, 67, 542(2020).

[17] Richardson J A, Webster E A G, Grant L A, Henderson R K[J]. IEEE Trans. Electron Devices, 58, 2028(2011).

[18] Wang C, Wang J Y, Xu Z Y, Wang R, Li J H, Zhao J Y, Wei Y M, Lin Y[J]. Optik, 185, 1134(2019).

[19] Cheng Z, Zheng X Q, Palubiak D, Deen M J, Peng H[J]. IEEE Trans. Electron Devices, 63, 1940(2016).

[20] Xu Y, Zhao T C, Li D[J]. Superlattices Microstruct., 113, 635(2018).

[21] Hurkx G A M, Klaassen D B M, Knuvers M P G[J]. IEEE Trans. Electron Devices, 39, 331(1992).

[22] Mao W, Yang C, Hao Y, Zhang J C, Liu H X, Ma X H, Wang C, Zhang J F, Yang L A, Xu S R, Bi Z W, Zhou Z, Yang L, Wang H[J]. Acta Phys. Sin., 60, 017205(2011).

[23] Liu J H, Guo Y F, Huang X M, Huang Z, Yao X J[J]. J. Nanjing Univ. Post. Telecom. (Nat.Sci.Ed.), 40, 9(2020).