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    Journals >Chinese Journal of Quantum Electronics >Volume 20 >Issue 5 >Page 595 > Article
    • Chinese Journal of Quantum Electronics
    • Vol. 20, Issue 5, 595 (2003)
    Optimum Al Composition Analysis on AlGaInP Quaternary Double Heterojunction Light-emitting Diodes
    [in Chinese]*, [in Chinese], [in Chinese], and [in Chinese]
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    DOI: Cite this Article
    [in Chinese], [in Chinese], [in Chinese], [in Chinese]. Optimum Al Composition Analysis on AlGaInP Quaternary Double Heterojunction Light-emitting Diodes[J]. Chinese Journal of Quantum Electronics, 2003, 20(5): 595 Copy Citation Text show less
    References

    [1] Sugawara H, Itaya K. High-brightness InGaA1P green light-emitting diodes [J]. Appl. Phys. Lett., 1992, 61(15):1775

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    [in Chinese], [in Chinese], [in Chinese], [in Chinese]. Optimum Al Composition Analysis on AlGaInP Quaternary Double Heterojunction Light-emitting Diodes[J]. Chinese Journal of Quantum Electronics, 2003, 20(5): 595
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