• Chinese Journal of Quantum Electronics
  • Vol. 20, Issue 5, 595 (2003)
[in Chinese]*, [in Chinese], [in Chinese], and [in Chinese]
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  • [in Chinese]
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    DOI: Cite this Article
    [in Chinese], [in Chinese], [in Chinese], [in Chinese]. Optimum Al Composition Analysis on AlGaInP Quaternary Double Heterojunction Light-emitting Diodes[J]. Chinese Journal of Quantum Electronics, 2003, 20(5): 595 Copy Citation Text show less

    Abstract

    In the case of no determination of Al composition on blocking layer, this paper has proved that there is an optimum Al composition so that carriers in undoped layer would recombine on the largest scale by analyzing their transportion in double heterojunction. The definition of optimum Al composition would have a guidance to device structure's design and MOCVD epitaxy.
    [in Chinese], [in Chinese], [in Chinese], [in Chinese]. Optimum Al Composition Analysis on AlGaInP Quaternary Double Heterojunction Light-emitting Diodes[J]. Chinese Journal of Quantum Electronics, 2003, 20(5): 595
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