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    Journals >Chinese Journal of Quantum Electronics >Volume 18 >Issue 3 >Page 278 > Article
    • Chinese Journal of Quantum Electronics
    • Vol. 18, Issue 3, 278 (2001)
    Effect of the Modulated Doping on the Work Voltage of HB-LED
    [in Chinese]1、2, [in Chinese]2, [in Chinese]2, and [in Chinese]2
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    [in Chinese], [in Chinese], [in Chinese], [in Chinese]. Effect of the Modulated Doping on the Work Voltage of HB-LED[J]. Chinese Journal of Quantum Electronics, 2001, 18(3): 278 Copy Citation Text show less
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    [in Chinese], [in Chinese], [in Chinese], [in Chinese]. Effect of the Modulated Doping on the Work Voltage of HB-LED[J]. Chinese Journal of Quantum Electronics, 2001, 18(3): 278
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