• Chinese Journal of Quantum Electronics
  • Vol. 18, Issue 3, 278 (2001)
[in Chinese]1、2, [in Chinese]2, [in Chinese]2, and [in Chinese]2
Author Affiliations
  • 1[in Chinese]
  • 2[in Chinese]
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    DOI: Cite this Article
    [in Chinese], [in Chinese], [in Chinese], [in Chinese]. Effect of the Modulated Doping on the Work Voltage of HB-LED[J]. Chinese Journal of Quantum Electronics, 2001, 18(3): 278 Copy Citation Text show less

    Abstract

    Based on the results of AlGaInP LED samples measured by electro-chemical C-V profiler and their work voltages,we analyzed the contact-voltage difference from the homo-junctions,such as N+-N and P+-P junction,pointed out that the carrier density distribution of the modulated doping have a distinctive effect on the work voltage of HB-LED,and presented the method decreasing further HB-LED's work voltage.
    [in Chinese], [in Chinese], [in Chinese], [in Chinese]. Effect of the Modulated Doping on the Work Voltage of HB-LED[J]. Chinese Journal of Quantum Electronics, 2001, 18(3): 278
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