With the development of high repetition radiation imaging and application of time of flight in nuclear medicine imaging, the ultrafast scintillation crystals are essential and become one of the research focuses. At present, there are three kinds of applied ultrafast scintillation crystals: core-valence luminescence crystals, direct band gap semiconductors and thermal quenching scintillation crystals. These scintillation crystals show decay time of lessthan 3 ns and have been applied in the high repetition radiation imaging, particle physics experiments and nuclear experiments. However, their light yield is low and energy resolution is poor, and slow luminescence component is also observed. These disadvantages limit their applications in many fields, such as positron emission computed tomography (PET). Therefore, the innovations are needed both in scintillation mechanism and crystals preparation to obtain the scintillation crystals satisfying the requirements of the most applications.