[1] E. Muñoz. (Al,In,Ga) N-based photodetectors. Some materials issues. Phys. Status Solidi B, 244, 2859-2877(2007).

[2] E. Munoz, E. Monroy, J. L. Pau, F. Calle, F. Omnes, P. Gibart. III nitrides and UV detection. J. Phys. Condens. Matter, 13, 7115-7137(2001).

[3] G. Wang, H. Lu, D. Chen, F. Ren, R. Zhang, Y. Zheng. High quantum efficiency GaN-based p-i-n ultraviolet photodetectors prepared on patterned sapphire substrates. IEEE Photon. Technol. Lett., 25, 652-654(2013).

[4] E. Monroy, E. Munoz, F. J. Sánchez, F. Calle, E. Calleja, B. Beaumont, P. Gibart, J. A. Munoz, F. Cusso. High-performance GaN p-n junction photodetectors for solar ultraviolet applications. Semicond. Sci. Technol., 13, 1042-1046(1998).

[5] F. Xie, H. Lu, D. Chen, F. Ren, R. Zhang, Y. Zheng. Bias-selective dual-operation-mode ultraviolet Schottky-barrier photodetectors fabricated on high-resistivity homoepitaxial GaN. IEEE Photon. Technol. Lett., 24, 2203-2205(2012).

[6] Y. Q. Bie, Z. M. Liao, H. Z. Zhang, G. R. Li, Y. Ye, Y. B. Zhou, J. Xu, Z. X. Qin, L. Dai, D. P. Yu. Self-powered, ultrafast, visible-blind UV detection and optical logical operation based on ZnO/GaN nanoscale p-n junctions. Adv. Mater., 23, 649-653(2011).

[7] S. M. Hatch, J. Briscoe, S. Dunn. A self-powered ZnO-nanorod/CuSCN UV photodetector exhibiting rapid response. Adv. Mater., 25, 867-871(2013).

[8] T. Niwa, T. Fujii, T. Oka. High carrier activation of Mg ion-implanted GaN by conventional rapid thermal annealing. Appl. Phys. Express, 10, 091002(2017).

[9] T. Narita, T. Kachi, K. Kataoka, T. Uesugi. P-type doping of GaN by magnesium ion implantation. Appl. Phys. Express, 10, 016501(2016).

[10] B. N. Feigelson, T. J. Anderson, M. Abraham, J. A. Freitas, J. K. Hite, C. R. Eddy, F. J. Kub. Multicycle rapid thermal annealing technique and its application for the electrical activation of Mg implanted in GaN. J. Cryst. Growth, 350, 21-26(2012).

[11] D. G. Lee, A. Nishikawa, Y. Terai, Y. Fujiwara. Eu luminescence center created by Mg codoping in Eu-doped GaN. Appl. Phys. Lett., 100, 171904(2012).

[12] T. Hashizume. Effects of Mg accumulation on chemical and electronic properties of Mg-doped p-type GaN surface. J. Appl. Phys., 94, 431-436(2003).

[13] N. E. Posthuma, S. You, H. Liang, N. Ronchi, X. Kang, D. Wellekens, Y. N. Saripalli, S. Decoutere. Impact of Mg out-diffusion and activation on the p-GaN gate HEMT device performance. 28th International Symposium on Power Semiconductor Devices and ICs (ISPSD), 95-98(2016).

[14] I. C. Kizilyalli, A. P. Edwards, H. Nie, D. Disney, D. Bour. High voltage vertical GaN p-n diodes with avalanche capability. IEEE Trans. Electron Devices, 60, 3067-3070(2013).

[15] I. C. Kizilyalli, A. P. Edwards, H. Nie, D. Bour, T. Prunty, D. Disney. 3.7  kV vertical GaN PN diodes. IEEE Electron Device Lett., 35, 247-249(2014).

[16] GaNo Opto. GaNo Opto GT-ABC-L Datasheet.

[17] E. Munoz, E. Monroy, J. A. Garrido, I. Izpura, F. J. Sánchez, M. A. Sánchez-Garcıa, E. Calleja, B. Beaumont, P. Gibart. Photoconductor gain mechanisms in GaN ultraviolet detectors. Appl. Phys. Lett., 71, 870-872(1997).

[18] D. V. Kuksenkov, H. Temkin, A. Osinsky, R. Gaska, M. A. Khan. Origin of conductivity and low-frequency noise in reverse-biased GaN p-n junction. Appl. Phys. Lett., 72, 1365-1367(1998).

[19] Y. Zhang, H. Y. Wong, M. Sun, S. Joglekar, L. Yu, N. A. Braga, R. V. Mickevicius, T. Palacios. Design space and origin of off-state leakage in GaN vertical power diodes. IEEE International Electron Devices Meeting (IEDM), 1-35(2015).

[20] A. Lewis. Evidence for the Mott model of hopping conduction in the anneal stable state of amorphous silicon. Phys. Rev. Lett., 29, 1555-1558(1972).

[21] R. M. Hill. Hopping conduction in amorphous solids. Philos. Mag., 24, 1307-1325(1971).

[22] O. Mitrofanov, M. Manfra. Poole-Frenkel electron emission from the traps in AlGaN/GaN transistors. J. Appl. Phys., 95, 6414-6419(2004).

[23] J. Kim, J. Y. Kim, Y. Tak, J. Kim, H. G. Hong, M. Yang, S. Chae, J. Park, Y. Park, U. I. Chung. Investigation of reverse leakage characteristics of InGaN/GaN light-emitting diodes on silicon. IEEE Electron Device Lett., 33, 1741-1743(2012).

[24] Y. Shen, X. Yan, Z. Bai, X. Zheng, Y. Sun, Y. Liu, P. Lin, X. Chen, Y. Zhang. A self-powered ultraviolet photodetector based on solution-processed p-NiO/n-ZnO nanorod array heterojunction. RSC Adv., 5, 5976-5981(2015).

[25] H. Y. Chen, K. W. Liu, X. Chen, Z. Z. Zhang, M. M. Fan, M. M. Jiang, X. H. Xie, H. F. Zhao, D. Z. Shen. Realization of a self-powered ZnO MSM UV photodetector with high responsivity using an asymmetric pair of Au electrodes. J. Mater. Chem. C, 2, 9689-9694(2014).

[26] O. Game, U. Singh, T. Kumari, A. Banpurkar, S. Ogale. ZnO (N)–Spiro-MeOTAD hybrid photodiode: an efficient self-powered fast-response UV (visible) photosensor. Nanoscale, 6, 503-513(2014).

[27] Z. Q. Bai, Z. W. Liu. A broadband photodetector based on rhodamine B-sensitized ZnO nanowires film. Sci. Rep., 7, 11384(2017).