Magnesium ion-implantation-based gallium nitride p-i-n photodiode for visible-blind ultraviolet detection

Weizong Xu; Yating Shi; Fangfang Ren; Dong Zhou; Linlin Su; Qing Liu; Liang Cheng; Jiandong Ye; Dunjun Chen; Rong Zhang; Youdou Zheng; Hai Lu

doi:10.1364/PRJ.7.000B48

Journals >Photonics Research >Volume 7 >Issue 8 >Page B48 > Article

Photonics Research
Vol. 7, Issue 8, B48 (2019)

Magnesium ion-implantation-based gallium nitride p-i-n photodiode for visible-blind ultraviolet detection

Weizong Xu^{1、2、†,*}, Yating Shi^1、†, Fangfang Ren¹, Dong Zhou¹, Linlin Su¹, Qing Liu¹, Liang Cheng¹, Jiandong Ye¹, Dunjun Chen¹, Rong Zhang¹, Youdou Zheng¹, and Hai Lu^1、3、*

Author Affiliations

¹School of Electronic Science and Engineering, Nanjing University, Nanjing 210023, China

²e-mail: wz.xu@nju.edu.cn

³e-mail: hailu@nju.edu.cn

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DOI: 10.1364/PRJ.7.000B48 Cite this Article Set citation alerts

Weizong Xu, Yating Shi, Fangfang Ren, Dong Zhou, Linlin Su, Qing Liu, Liang Cheng, Jiandong Ye, Dunjun Chen, Rong Zhang, Youdou Zheng, Hai Lu. Magnesium ion-implantation-based gallium nitride p-i-n photodiode for visible-blind ultraviolet detection[J]. Photonics Research, 2019, 7(8): B48 Copy Citation Text

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