• Acta Optica Sinica
  • Vol. 34, Issue 11, 1131001 (2014)
Dai Yin1、*, Li Lin1, Yuan Huibo1, Qiao Zhongliang1, Kong Lingyi2, Gu Lei1, Liu Yang1, Li Te1, Qu Yi1, and Liu Guojun1
Author Affiliations
  • 1[in Chinese]
  • 2[in Chinese]
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    DOI: 10.3788/aos201434.1131001 Cite this Article Set citation alerts
    Dai Yin, Li Lin, Yuan Huibo, Qiao Zhongliang, Kong Lingyi, Gu Lei, Liu Yang, Li Te, Qu Yi, Liu Guojun. Research on Photoluminescence Properties of InGaAs/GaAs Strained Quantum Well[J]. Acta Optica Sinica, 2014, 34(11): 1131001 Copy Citation Text show less
    References

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    [7] Miao Zhenhua, Xu Yingqiang, Zhang Shiyong, et al.. The effects of rapid thermal annealing for high strain InGaAs/GaAs quantum well [J]. Chinese J Semiconductor, 2005, 26(9): 1749-1752.

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    Dai Yin, Li Lin, Yuan Huibo, Qiao Zhongliang, Kong Lingyi, Gu Lei, Liu Yang, Li Te, Qu Yi, Liu Guojun. Research on Photoluminescence Properties of InGaAs/GaAs Strained Quantum Well[J]. Acta Optica Sinica, 2014, 34(11): 1131001
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