Strained InGaAs/GaAs single quantum wells (SQWs) are grown by the low pressure metal-organic chemieal vapor deposition (LP-MOCVD). The experimental results show that the photoluminescence (PL) emission of InGaAs/GaAs SQW can be greatly improved by optimizing the growth rate, V/III ratio and temperature. It is found that the QW structures grown at the growth temperature of 600 ℃ and the growth rate of 1.15 μm/h exhibit better PL emission, stronger PL intensity with higher V/III ratio. The reason why the blue shift phenomenon of PL spectrum disappear when the InGas ratio is higher is explained by a model.