Researching | Magnetic and eletronic transport properties in n-type diluted magnetic semiconductor Ge0.96–xBixFe0.04Te film

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Acta Physica Sinica
Vol. 68, Issue 10, 107501-1 (2019)

Magnetic and eletronic transport properties in n-type diluted magnetic semiconductor Ge_0.96–xBi_xFe_0.04Te film

Ji-Yu Fan¹, Yu Feng¹, Di Lu¹, Wei-Chun Zhang¹, Da-Zhi Hu¹, Yu-E Yang¹, Ru-Jun Tang², Bo Hong³, Lang-Sheng Ling⁴, Cai-Xia Wang⁵, Chun-Lan Ma^6、*, and Yan Zhu^1、*

Author Affiliations

¹College of Science, Nanjing University of Aeronautics and Astronautics, Nanjing 210006, China

²Department of Physics, Soochow University, Suzhou 215006, China

³Department of Materials, China Jiliang University, Hangzhou 310018, China

⁴High Magnetic Field Laboratory, Chinese Academy of Sciences, Hefei 230031, China

⁵Department of Physics, Yangzhou University, Yangzhou 225009, China

⁶Jiangsu Key Laboratory of Micro and Nano Heat Fluid Flow Technology and Energy Application, School of Mathematics and Physics, Suzhou University of Science and Technology, Suzhou 215009, China

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DOI: 10.7498/aps.68.20190019 Cite this Article

Ji-Yu Fan, Yu Feng, Di Lu, Wei-Chun Zhang, Da-Zhi Hu, Yu-E Yang, Ru-Jun Tang, Bo Hong, Lang-Sheng Ling, Cai-Xia Wang, Chun-Lan Ma, Yan Zhu. Magnetic and eletronic transport properties in n-type diluted magnetic semiconductor Ge_0.96–xBi_xFe_0.04Te film [J]. Acta Physica Sinica, 2019, 68(10): 107501-1 Copy Citation Text

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References

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Ji-Yu Fan, Yu Feng, Di Lu, Wei-Chun Zhang, Da-Zhi Hu, Yu-E Yang, Ru-Jun Tang, Bo Hong, Lang-Sheng Ling, Cai-Xia Wang, Chun-Lan Ma, Yan Zhu. Magnetic and eletronic transport properties in n-type diluted magnetic semiconductor Ge_0.96–xBi_xFe_0.04Te film [J]. Acta Physica Sinica, 2019, 68(10): 107501-1

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