Fig. 1. (a) XRD diffraction pattern of Ge_0.76Bi_0.2Fe_0.04Te film; (b) φ-scans of Ge_0.76Bi_0.2Fe_0.04Te film in {220} plane. (a) Ge_0.76Bi_0.2Fe_0.04Te薄膜XRD扫描图; (b)沿着{220}面内XRD扫描图

Fig. 2. (a) AFM 5 μm × 5 μm images of Ge_0.76Bi_0.2Fe_0.04Te film; (b) the height profile along the red solid line. (a) Ge_0.76Bi_0.2Fe_0.04Te薄膜表面AFM图; (b)沿着红线测试薄膜表面高度起伏结果

Fig. 3. (a) Magnetic field dependence of Hall voltage for Ge_0.76Bi_0.2Fe_0.04Te film under different temperatures, inset shows the temperature dependence of carrier concentrations; (b) magnetic field dependence of Hall voltage for Ge_0.64Bi_0.32Fe_0.04Te film under different temperatures, inset shows the temperature dependence of carrier concentrations. (a) Ge_0.76Bi_0.2Fe_0.04Te薄膜不同温度下霍尔效应测量结果, 插图为载流子浓度随温度变化; (b) Ge_0.64Bi_0.32Fe_0.04Te薄膜不同温度下霍尔效应测量结果, 插图为载流子浓度随温度变化

Fig. 4. (a) Temperature dependent resistivity of Ge_0.76Bi_0.2Fe_0.04Te and Ge_0.64Bi_0.32Fe_0.04Te film; (b) temperature dependent resistivity of mobility; (c) temperature dependent resistivity of Ge_0.76Bi_0.2Fe_0.04Te film under 0 T and 3.0 T field; (d) emperature dependent resistivity of Ge_0.64Bi_0.32Fe_0.04Te film under 0 T and 3.0 T field. (a) Ge_0.76Bi_0.2Fe_0.04Te和Ge_0.64Bi_0.32Fe_0.04Te电阻率随温度变化曲线; (b)迁移率随温度变化曲线; (c) Ge_0.76Bi_0.2Fe_0.04Te薄膜在零磁场和3.0 T磁场下变温电阻率曲线; (d) Ge_0.64Bi_0.32Fe_0.04Te薄膜在零磁场和3.0 T磁场下变温电阻率曲线

Fig. 5. Temperature dependence of magnetic susceptibility curves for Ge_0.64Bi_0.32Fe_0.04Te film; inset shows temperature dependence of inverse magnetic susceptibility and the solid line is the fitting result with the Cuire-Weiss law. Ge_0.64Bi_0.32Fe_0.04Te薄膜磁化率随温度变化曲线; 插图为磁化率倒数随温度变化曲线, 直线是利用居里外斯定律拟合的结果

Fig. 6. Isothermal magnetization curves for Ge_0.64Bi_0.32Fe_0.04Te film at 10.0 K, and inset shows the magnified hysteresis loop. 在10.0 K温度下Ge_0.64Bi_0.32Fe_0.04Te薄膜磁滞回线; 插图为低磁场部分放大图像