• Journal of Infrared and Millimeter Waves
  • Vol. 38, Issue 2, 149 (2019)
JIN Xiang-Liang1、2, PENG Ya-Nan1, ZENG Duo-Duo1, YANG Hong-Jiao1, PU Hua-Yan3, PENG Yan3, and LUO Jun3
Author Affiliations
  • 1[in Chinese]
  • 2[in Chinese]
  • 3[in Chinese]
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    DOI: 10.11972/j.issn.1001-9014.2019.02.004 Cite this Article
    JIN Xiang-Liang, PENG Ya-Nan, ZENG Duo-Duo, YANG Hong-Jiao, PU Hua-Yan, PENG Yan, LUO Jun. STI-bounded single-photon avalanche diode with high photo current and low dark rate[J]. Journal of Infrared and Millimeter Waves, 2019, 38(2): 149 Copy Citation Text show less
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    [3] Nightingale N S. A new silicon avalanche photodiode photo counting detector module for astronomy [J]. Experimental Astronomy. 1990,1(6):407-422.

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    [5] Niclass C, Favi C, Kluter T, et al. A 128 × 128 single-photon image sensor with column-level l0-bit time todigital converter array[J]. IEEE J. Solid-State Circuits, 2008, 43(12):2977-2989.

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    [7] Carrara L, Niclass C, Scheidegger N, et al. A gamma, X-ray and high energy proton radiation-tolerant CMOS image sensor for space applications[C]. In Proc. IEEE Intl. Solid-State Circuits Conf.-Dig. Tech. Papers , Feb. 2009:40-41.

    [8] Guerrieri F, Tisa S, Tosi A, et al. Single-photon camera for high-sensitivity high-speed applications[J]. Proc. SPIE, 2010, 7536:753605.

    [9] Finkelstein H, Hsu M J, Esener S C. STI-bounded single-photon avalanche diode in a deep-submicrometer CMOS technology [J]. IEEE Electron Device Letters, 2006, 27(11):887-889.

    [10] Gersbach M, Niclass C, Charbon E, et al. A single photon detector implemented in a 130 nm CMOS imaging process [C]. Solid-State Device Research Conference, IEEE, Essderc, European. 2008:270-273.

    [11] Richardson J A, Grant L A, Henderson R K. Low dark count single-photon avalanche diode structure compatible with standard nanometer scale CMOS technology [J]. IEEE Photonics Technology Letters, 2009, 21(14):1020-1022.

    [12] Richardson J A, Grant L A, Webster E A G, et al. A 2μm diameter, 9Hz dark count, single photon avalanche diode in 130 nm CMOS technology [C]. Proceeding of European Solid State Device Research Conference, IEEE. 2010:257-260.

    [13] Richardson J A, Webster E A G, Grant L A, et al. Scaleable single photon avalanche diode structures in nanometer CMOS technology [J]. IEEE Transαctions on Electron Devices. 2011, 58(7): 2028-2035.

    [15] Malass I, Uhring W, Normand J P L, et al. A single photon avalanche detector in a 180 nm standard CMOS technology [C]. New Circuits and Systems Conference. IEEE, 2015:1-4.

    JIN Xiang-Liang, PENG Ya-Nan, ZENG Duo-Duo, YANG Hong-Jiao, PU Hua-Yan, PENG Yan, LUO Jun. STI-bounded single-photon avalanche diode with high photo current and low dark rate[J]. Journal of Infrared and Millimeter Waves, 2019, 38(2): 149
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