Researching | JAD Volume 13 Issue 3,2023

Stable large-area monodomain in as-grown bulk ferroelectric single crystal Sn₂P₂S₆

Yingzhuo Lun, Jiaqian Kang, Wenfu Zhu, Jianming Deng, Xingan Jiang, Cheng Zhu, Qi Ren, Xian Zi, Ziyan Gao, Tianlong Xia, Zishuo Yao, Xueyun Wang, and Jiawang Hong

Driven by the minimization of total energy, the multi-domain morphology is preferred in as-grown ferroelectrics to reduce the depolarization and strain energy during the paraelectric to ferroelectric phase transition. However, the complicated multi-domain is not desirable for certain high-performance ferroelectric elec

Journal of Advanced Dielectrics

Publication Date: Jan. 01, 1900
Vol. 13, Issue 3, 2243001 (2023)

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Ferroelastic and

90^{\circ}

ferroelectric domains in

{Bi}_{2} {WO}_{6}

single crystals

Xianghan Xu, Fei-Ting Huang, and Sang-Wook Cheong

High-quality single crystals of Bi2WO6 are grown using a flux method. With different flux growth recipes, we aim to control the crystallization temperature to be lower and higher than the ferroelectric transition temperature, resulting in mono-domain and multi-domain Bi2WO6 crystals, respectively. Abundant ferroelastic

Journal of Advanced Dielectrics

Publication Date: Jan. 01, 1900
Vol. 13, Issue 3, 2243002 (2023)

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Domain wall state diagram for SrTiO₃/BaTiO₃ superlattice structures

Yimei You, Fengjuan Yang, and Pingping Wu

The domain wall structure of ferroelectric/ paraelectric superlattices can be much more complex due to the influence of the superlattice stacking structure, the in-plane strain induced by the substrate and environmental temperature. In this study, we employed a phase field model to investigate the domain wall state of

Journal of Advanced Dielectrics

Publication Date: Jan. 01, 1900
Vol. 13, Issue 3, 2243003 (2023)

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Insulator-to-metal transition in RCoO₃ (R = Pr, Nd)

Sujoy Saha, Sadhan Chanda, Alo Dutta, and T. P. Sinha

We report a straightforward tool to investigate insulator-metal transition in RCoO3 (R = Pr, and Nd) nanoparticles prepared by a sol–gel technique. Thermogravimetric analysis (TGA) of the as-prepared gel is performed to get the lowest possible calcination temperature of RCoO3 nanoparticles. The Rietveld refinement of t

Journal of Advanced Dielectrics

Publication Date: Jan. 01, 1900
Vol. 13, Issue 3, 2350003 (2023)

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Effects of Mn-doping on the structure and electrical properties of Sm-PMN-PT piezoceramics

Chaofeng Wu, Wen Gong, Jinfeng Geng, Jianye Cui, Lipeng Mi, Jingkai Nie, Qiang He, Jiajiu Li, and Fang-Zhou Yao

MnO2-modified Pb0.9625Sm0.025(Mg1/3Nb2/3)0.71Ti0.29O3 ceramics were prepared via a solid-state reaction approach. Results of detailed characterizations revealed that the addition of MnO2 has influence on the grain size, and all samples exhibit a pure perovskite structure. As the content of manganese increases, the volu

Journal of Advanced Dielectrics

Publication Date: Jan. 01, 1900
Vol. 13, Issue 3, 2350004 (2023)

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High recoverable energy storage density of Na_0.5Bi_0.5TiO₃ lead-free ceramics modified by Bi(Mg_0.5Hf_0.5)O₃

Kaiyuan Wang, Wenhua Li, Xingui Tang, Siyuan Zhang, Yansong Zhang, Jia Hu, Zhihao Shen, Yanping Jiang, and Xiaobin Guo

Enhancing the availability and reliability of dielectric ceramic energy storage devices is of great importance. In this work, (1-x)Na0.5Bi0.5TiO3–xBi(Mg0.5Hf0.5)O3 (NBT–xBMH) lead-free ceramics were created utilizing a solid-state reaction technique. All NBT–xBMH ceramics have a single perovskite structure. With increa

Journal of Advanced Dielectrics

Publication Date: Jan. 01, 1900
Vol. 13, Issue 3, 2350008 (2023)

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Ferroelectric and piezoelectric properties of lead-free Li_0.06(K_0.5Na_0.5)_0.94NbO₃ thin films

Xinyu Bu, Changhong Yang, Mengjia Fan, Wenxuan Wang, Xiujuan Lin, and Shifeng Huang

Lead-free (K0.5Na0.5)NbO3 (KNN) and Li0.06(K0.5Na0.5)0.94NbO3 (LKNN) thin films were fabricated by a sol-gel method. The effects of Li substitution on crystal structure, microstructure and electrical properties of KNN film were systematically studied. Li doping can enhance the ferroelectric and piezoelectric properties

Journal of Advanced Dielectrics

Publication Date: Jan. 01, 1900
Vol. 13, Issue 3, 2350009 (2023)

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Microstructure, domain structure, ferroelectric and piezoelectric properties of textured bismuth-containing ceramics

E. I. Sitalo, O. A. Bunina, V. G. Smotrakov, N. V. Malomyzheva, and N. A. Boldyrev

In this report, the processes of texture formation in grain-oriented ferroelectric ceramics based on layer-structured ferroelectric Bi4Ti3O2 (LSBT) prepared by hot forging method are considered. The microstructural and X-ray methods revealed the axial textured formation in ferroelectric ceramic that are used to estimat In this report, the processes of texture formation in grain-oriented ferroelectric ceramics based on layer-structured ferroelectric Bi₄Ti₃O₂ (LSBT) prepared by hot forging method are considered. The microstructural and X-ray methods revealed the axial textured formation in ferroelectric ceramic that are used to estimate the orientation factor of ceramics. For the first time, the domain structure changes when poling the anisotropic ferroelectric ceramics are investigated. The anisotropy of electromechanical, piezoelectric and ferroelectric properties of ferroelectric ceramics due to the crystal texture existence in it is studied. The aim of this study is to study the processes of crystalline texture formation in polycrystalline BLSF and to establish the dependence of the electrophysical properties of ceramics on the degree of texturing. Ceramics were textured using the hot stamping (HS) method developed at the Research Institute of Physics. The mechanism of the method is that the workpiece is subjected to uniaxial pressure and free radial deformation occurs due to the plastic flow of the material until the workpiece fills the free volume of the mold, which is created by placing the workpiece in the mold with a gap. The study of the microstructure of ceramics showed that an increase in the firing temperature in the range 950–1050

^{\circ}

C causes a sharp decrease in porosity and increases the density to 7.95 g/

{cm}^{3}

, which is 98% of theoretical. An X-ray analysis was performed and microstructural studies were carried out, which revealed the formation of an axial texture in ceramics. The features of the switching processes of textured ceramics are revealed. The characteristics of the polarization switching of ceramics in the directions parallel and perpendicular (

⊥

) of the pressure axis during hot processing were obtained from the dielectric hysteresis

P

(

E

) loops, i.e., axis axial texture. The

⊥

-cut ceramics are characterized by a more complete polarization switching, which is associated with the additional orientation of the (001) crystallographic planes in the textured material, as well as the presence of a threshold switching field. In the temperature range from -196 to + 600

^{\circ}

C, the anisotropy of the electro physical properties of ceramics due to the presence of a crystalline texture in it was studied. The dielectric constant, electrical conductivity, piezoelectric and elastic coefficients were measured for sections of ceramics of different orientations relative to the axis of the texture. The anisotropy of the dielectric constant and electrical conductivity manifests itself weakly at room temperature and increases sharply when approaching the Curie temperature. In the temperature range +20–400

^{\circ}

C, the high thermal stability of the piezoelectric module

d_{33}

, measured by the quasistatic method, was established..

Journal of Advanced Dielectrics

Publication Date: Jan. 01, 1900
Vol. 13, Issue 3, 2350011 (2023)

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