High recoverable energy storage density of Na0.5Bi0.5TiO3 lead-free ceramics modified by Bi(Mg0.5Hf0.5)O3

Kaiyuan Wang; Wenhua Li; Xingui Tang; Siyuan Zhang; Yansong Zhang; Jia Hu; Zhihao Shen; Yanping Jiang; Xiaobin Guo

doi:10.1142/S2010135X2350008X

Abstract

Enhancing the availability and reliability of dielectric ceramic energy storage devices is of great importance. In this work, (1-

x

)

{Na}_{0.5} {Bi}_{0.5} {TiO}_{3}

–

x

Bi(

{Mg}_{0.5} {Hf}_{0.5}

)

O_{3}

(NBT–

x

BMH) lead-free ceramics were created utilizing a solid-state reaction technique. All NBT–

x

BMH ceramics have a single perovskite structure. With increasing BMH doping, the grain size shrinks drastically, which greatly enhances the breakdown electric field (310 kV/cm at

x

= 0.25). Additionally, the relaxation behaviors of NBT–

x

BMH ceramics with high BMH content are more remarkable. Among all designed components, the NBT–0.25BMH ceramic exhibits the best energy storage performance with a high

W_{rec}

of 4.63 J/

{cm}^{3}

and an

η

of 75.1% at 310 kV/cm. The NBT–0.25BMH ceramic has exceptional resistance to fluctuations in both frequency (5–500 Hz) and temperature (30–100

^{\circ}

C). Charge–discharge test shows that the NBT–0.25BMH ceramic has a quick discharge rate (

t_{0.9} <

110 ns). With these properties, the NBT–0.25BMH ceramic may have applications in microdevices as well as in ultra-high power electronic systems.