[1] Satio H,et,al. Low chirp observed in directly modulated quantum dot lasers [J].IEEE Photonics TechnologyLett.,2000,12(10): 1298-1300.
[2] Mukai K,et al. 1.3 mm lasing characteristics of self-assembled in GaAs-GaAs quantum dots [J].IEEE Journal of Quantum Electronaes,2000,36(4): 472-478.
[3] Wang Zhanguo,et al. Self assembled quantum dots,wires and quantum-dot lasers [J].Journal of Crystal Growth,2001,227-228: 1132-1139.
[4] Wang R H,et al. Room-temperature operation of InAs quantum-dash laser on InP(001)[J].IEEE Photonics Technology Lette.,2001,13(8): 767-769.
[7] Hu Y Z,Koch S W,Lindberg M,et al. Biexcitons in semiconductor quantum dots [J].Phys. Rev. Lett.,1997,64: 1805.
[8] Efros A L,Efros A. Interband absorption of light in a semiconductor sphere [J].Sov. Phys. Semicond.,1982,16:772.
[9] Banyai L,Koch S W. Sernaconductor Quantum Dots [M].World-Scientific,Singapore,1993.Chaps 1-5.
[10] Peyghambarian N,Koch S W,Mysrowicz A. Introduction to Semiconductor Optics New Jersy: Prentice,1993.235-253.
[12] Tomoyuki A,Haruhiko K,et al. Nonlinear gain dynamics in quantum-dot optical amplifiers and its application to optical communication devices [J].IEEE Journal of Quantum Electronics,2001,37(8): 1059-1065.
[15] Hu Y Z,Lindberg M,Koch S W. Theory of optically excited intrinsic semiconductor quantum dots [J].Phys.Rev. B,1990,42: 1713.
[16] Blombergen N,Shen Y R. Quantum-theoretical comparison of nonlinear susceptibilities in parametric media,lasers,and Raman lasers [J].Phys. Rev.,1964,133: A37.
[18] Herz K,et al. Biexciton formation in CdxZn1-xSe/ZnSe quantum-dot and quantum-well structures [J].Phys.Rev. B,1997,56: 15261.
[19] Oreistein J,Baker G L. Photogenerated gap states in polyacetylene [J].Phys. Rev. Lett.,1982,49: 1043-1046.
[20] Shunsuke Adachi,et al. Excitation of a breather model of bound soliton pairs in traps-polyacetylene by sub-five-femtosecond optical pulses [J].Phys. Rev. Lett.,2002,89: 027401.